MT40A512M16TB-062E:J vs NT5AD512M16C4-JR Vergleich
Detaillierter Direktvergleich von MT40A512M16TB-062E:J von Micron Technology und NT5AD512M16C4-JR von Nanya Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ Aktiv
Spezifikationsvergleich
| Parameter | MT40A512M16TB-062E:J | NT5AD512M16C4-JR |
|---|---|---|
| Marke | Micron Technology | Nanya Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,10 | $73,75 |
| Speichertyp | SDRAM - DDR4 | DDR4 SDRAM |
| Speichergröße | 8Gbit (512M x 16) | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | — |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Gehäuse | 96-FBGA (7.5x13.5 mm) | TFBGA-96 |
| Betriebstemperaturbereich | 0°C to 95°C | 0°C to +95°C |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Montageart | Surface Mount | — |
| Speicherorganisation | — | 512M x16 |
| Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Datenrate | — | 1.6 GHz (DDR4-3200) |
| Standby Current | — | 0.023 A (max) |
| Number of Terminals | — | 96 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |