Die Speicherpreise ändern sich täglich – die Preise auf der Website können hinter dem Markt zurückbleiben. Bitte senden Sie eine RFQ für das aktuellste Angebot.
Aktuellen Preis anfragen →
Nanya Technology

NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

Teilenummer: NT5AD512M16C4-JR ✓ Aktiv
Auf Lager Versand in 1–3 Werktagen
1.2 V Vdss 0.023 A (max) Id TFBGA-96 Package DDR4 SDRAM Memory
Ab $73.75 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-09-22
Mengenpreise
Menge Stückpreis Gesamt
1 $94.74 $94,74
10 $89.5 $895,00
100 $84.25 $8.425,00
500 $79 $39.500,00
1.000 $73.75 $73.750,00
ℹ️ Alle Preise sind in USD

NT5AD512M16C4-JR Übersicht

The Nanya Technology NT5AD512M16C4-JR is a high-speed, standard DDR4 SDRAM component organized as 512M x16, providing 8Gbit of memory density. It operates from a 1.2V power supply and supports data rates up to 1.6GHz (DDR4-3200), making it suitable for a wide range of computing, networking, and industrial applications. The device is housed in a 96-ball TFBGA package, offering a compact footprint for space-constrained PCB designs.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to its predecessor DDR3. It is a key component in modern computing systems, providing the main memory for processors, and is also used in networking equipment, industrial controllers, and embedded systems. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation, which is critical for high-density memory modules and portable devices.

Key features of the NT5AD512M16C4-JR include auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The operating temperature range is 0°C to +95°C, making it suitable for commercial and industrial environments.

Technically, the device supports a burst length of 8 and on-die termination (ODT) for improved signal quality. The ZQ calibration function allows the device to adjust its output driver and ODT impedances to match the system's characteristic impedance, reducing reflections and improving data eye margins. The CRC function provides error detection for data transmitted during write operations, enhancing data integrity in critical applications.

Typical applications include consumer electronics (e.g., set-top boxes, smart TVs), industrial automation, networking systems (routers, switches), and smart IoT devices. The high density and speed make it ideal for applications requiring large memory capacity and fast data throughput, such as edge computing and real-time data processing.

When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet for high-speed signals to maintain signal integrity. The device requires a 1.2V VDD and a separate VPP supply (2.5V) for the wordline driver, which must be properly regulated.

Drop-in-Alternativen für NT5AD512M16C4-JR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Varianten dieser Serie

Modelle derselben Serie, die drop-in-kompatibel sind mit NT5AD512M16C4-JR (gleiche Bauform und Footprint) – abweichend in Package, Data Rate, Density, Operating Temperature, Memory Type.

Alliance Memory
Package: 96-FBGA (7.5x13)
Data Rate: 2666 Mbps
Operating Temperature: -40°C to +95°C
Vergleichen mit NT5AD512M16C4-JR →
Samsung Electronics
Package: 96-ball FBGA (9mm x 13mm)
Data Rate: 2400 Mbps
Density: 8 Gb
Vergleichen mit NT5AD512M16C4-JR →
Micron Technology
Package: 96-FBGA (7.5x13.5 mm)
Memory Type: SDRAM - DDR4
Vergleichen mit NT5AD512M16C4-JR →
Nanya Technology
Package: 96-ball TFBGA
Data Rate: 3200 Mbps
Density: 8Gb
Vergleichen mit NT5AD512M16C4-JR →
Nanya Technology
Package: FBGA-96 (TFBGA)
Data Rate: 1.333 GHz (DDR4-2666)
Operating Temperature: 0°C to +95°C
Vergleichen mit NT5AD512M16C4-JR →

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

NT5AD512M16C4-HR

Nanya Technology
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 1.333 GHz (DDR4-2666) · 0°C to +95°C · FBGA-96 (TFBGA) · 96

✓ Auf Lager

$43.1 / Stück

Datenblatt ansehen →

MT40A512M16TB-062E:R

Micron Technology
DDR4 SDRAM · 8 Gbit (512M x 16) · 3200 MT/s · 1600 MHz · 22 · 1.2V ±60mV · 2.5V (-125mV, +250mV) · 0°C to +95°C

✓ Auf Lager

$60 / Stück

Datenblatt ansehen →

K4A8G165WB-BCTD

Samsung Electronics
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC)

✓ Auf Lager

$37 / Stück

Datenblatt ansehen →

H5AN8G6NCJR-xxC

SK hynix
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps (VKC speed grade) · 1.2 V · 2.5 V · 0°C to 95°C · 96-ball FBGA

✓ Auf Lager

$6.5 / Stück

Datenblatt ansehen →

K4A8G165WB-BCRC

Samsung Electronics
DDR4 SDRAM (DRAM, volatile) · 8 Gb (1 GB) · 512M x 16 · 2400 Mbps (PC4-19200) · 1.2 V (1.14 V to 1.26 V) · CMOS DRAM, Samsung 8Gb B-die · 96-ball FBGA (PBGA96) · 0.8 mm

✓ Auf Lager

$12.57 / Stück

Datenblatt ansehen →

NT5AD512M16C4-JR Grenzwerte & elektrische Eigenschaften

Speichertyp DDR4 SDRAM
Speicherorganisation 512M x16
Density 8 Gbit
Supply Voltage (VDD) 1.2 V
Datenrate 1.6 GHz (DDR4-3200)
Gehäuse TFBGA-96
Betriebstemperaturbereich 0°C to +95°C
Standby Current 0.023 A (max)
Number of Terminals 96
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
Write Leveling Yes
Dynamic On-Chip Termination Yes
ZQ Calibration Yes
CRC Function Yes
RoHS Compliant

NT5AD512M16C4-JR Pin-Konfiguration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply (1.2V)
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin B1 VSS — Ground
Pin B2 DQ2 — Data input/output 2
Pin B3 DQ3 — Data input/output 3
Pin C1 VDDQ — I/O power supply
Pin C2 DQ4 — Data input/output 4
Pin C3 DQ5 — Data input/output 5
Pin D1 VSSQ — I/O ground
Pin D2 DQ6 — Data input/output 6
Pin D3 DQ7 — Data input/output 7
Pin E1 VPP — Wordline driver power (2.5V)
Pin E2 DQS_t — Data strobe (true)
Pin E3 DQS_c — Data strobe (complement)
Pin F1 VDD — Power supply
Pin F2 DM — Data mask
Pin F3 VSS — Ground

Typische Anwendungen

NT5AD512M16C4-JR ist geeignet für 6 Anwendungs: Networking Equipment, Industrial Automation, Smart IoT Devices, Consumer Electronics, Edge Computing, Automotive Infotainment.

🌐

Networking Equipment

The NT5AD512M16C4-JR provides high-density, high-speed memory for routers, switches, and firewalls. Its 8Gb capacity and DDR4-3200 data rate support large routing tables and fast packet processing. The low 1.2V operation reduces power in always-on network devices. With features like CRC and write leveling, it ensures reliable data transfer in high-speed backplanes. The TFBGA-96 package fits compact line card designs. For a 16-port switch, this memory can buffer and forward packets at line rate, improving throughput and reducing latency.

🏭

Industrial Automation

In industrial controllers and PLCs, the NT5AD512M16C4-JR offers reliable memory for real-time control algorithms and data logging. Its 0°C to +95°C temperature range suits factory environments. The built-in temperature sensor and auto self-refresh maintain data integrity during power fluctuations. The 8Gb density allows storing extensive process data. With a 1.2V supply, it integrates well with low-power industrial SoCs. For a robotic arm controller, this memory can store trajectory data and sensor readings, enabling precise motion control.

🧩

Smart IoT Devices

For smart home hubs and edge gateways, the NT5AD512M16C4-JR provides ample memory for running local AI models and managing multiple sensor streams. Its low power consumption is critical for battery-backed devices. The compact TFBGA-96 package enables small form factors. Features like auto precharge and data mask optimize memory efficiency. The 8Gb capacity supports complex applications like video analytics. In a smart speaker, this memory can buffer audio streams and process voice commands locally, reducing cloud dependency.

📺

Consumer Electronics

In set-top boxes and smart TVs, the NT5AD512M16C4-JR delivers high bandwidth for 4K video decoding and smooth UI rendering. Its DDR4-3200 speed ensures fast data access for multimedia applications. The 1.2V operation reduces heat in compact consumer enclosures. With 8Gb capacity, it can hold multiple app instances and video buffers. The CRC function enhances data integrity for streaming content. For a 4K TV, this memory supports high-resolution graphics and quick channel switching.

🖥️

Edge Computing

The NT5AD512M16C4-JR is ideal for edge servers and AI accelerators that require large memory capacity and high bandwidth. Its 8Gb density supports running multiple virtual machines or containerized applications. The low latency of DDR4-3200 enables fast inference for machine learning models. The built-in temperature sensor helps manage thermal throttling in dense edge deployments. With features like write leveling and DTC, it maintains signal integrity in high-speed traces. For an edge gateway processing sensor data, this memory can handle real-time analytics and local decision-making.

🚗

Automotive Infotainment

In automotive infotainment systems, the NT5AD512M16C4-JR provides reliable memory for navigation, media playback, and driver assistance displays. Its 0°C to +95°C range covers cabin environments. The low power consumption is beneficial for vehicle battery life. The 8Gb capacity supports complex UI and map data. Features like auto self-refresh ensure data retention during ignition cycles. For a head unit, this memory can store navigation maps and run multiple apps simultaneously, enhancing the user experience.

What is the memory density and organization of NT5AD512M16C4-JR?
The NT5AD512M16C4-JR is an 8Gbit DDR4 SDRAM organized as 512M x16. According to the Nanya datasheet, it provides 512 million addresses with a 16-bit data bus, totaling 8,589,934,592 bits. This configuration is common in applications requiring high capacity with a moderate bus width, such as networking equipment and industrial controllers.
What is the operating voltage and data rate of NT5AD512M16C4-JR?
The NT5AD512M16C4-JR operates at a nominal 1.2V supply voltage and supports data rates up to 1.6GHz, corresponding to DDR4-3200. This low voltage reduces power consumption compared to DDR3, while the high data rate enables fast data transfer for demanding applications like edge computing and real-time analytics.
What is the operating temperature range of NT5AD512M16C4-JR?
The NT5AD512M16C4-JR has an operating temperature range of 0°C to +95°C. This range covers commercial and most industrial environments, making it suitable for applications such as industrial automation, networking, and smart IoT devices. For extended temperature requirements, consider industrial-grade variants.
What package does NT5AD512M16C4-JR come in?
The NT5AD512M16C4-JR is housed in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package offers a compact footprint and good thermal performance, suitable for high-density PCB designs. The ball pitch and dimensions are specified in the datasheet for PCB layout.
What are the key features of NT5AD512M16C4-JR?
Key features include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC function. These features enhance signal integrity, reduce power, and improve reliability in high-speed systems, as detailed in the Nanya datasheet.
Where can I buy NT5AD512M16C4-JR online?
NT5AD512M16C4-JR is available from distributors such as LCSC (66 in stock as of 2026-08-19), Win Source, Jotrin, and Vyrian. Pricing starts at $94.74 for single units on LCSC. For bulk quantities, contact distributors for volume pricing and lead times.
What is the price of NT5AD512M16C4-JR?
As of 2026-08-19, the unit price for NT5AD512M16C4-JR is approximately $94.74 at LCSC for quantity 1. Prices decrease with volume: around $89.50 at 10, $84.25 at 100, $79.00 at 500, and $73.75 at 1000. Actual pricing may vary by distributor and market conditions.
What is the lead time for NT5AD512M16C4-JR?
Lead time for NT5AD512M16C4-JR varies by distributor and stock availability. LCSC shows 66 units in stock as of 2026-08-19, indicating immediate availability for small quantities. For larger orders, lead times may range from 4 to 12 weeks depending on supplier inventory and manufacturing schedules.
Is NT5AD512M16C4-JR in stock?
Yes, as of 2026-08-19, LCSC reports 66 units in stock. Other distributors like Win Source and Jotrin may also have stock. For real-time availability, check distributor websites or contact sales for current inventory levels.
NT5AD512M16C4-JR vs MT40A512M16TB-062E:R - which is better for a networking application?
Both are 8Gb DDR4-3200 512Mx16 devices in TFBGA-96. The MT40A512M16TB-062E:R from Micron is a direct competitor with similar specs. For networking, either works; choose based on availability, price, and supplier support. The Nanya part is often more cost-effective, while Micron may offer broader ecosystem support. Verify pin compatibility before substitution.
What is the difference between NT5AD512M16C4-JR and NT5AD512M16C4-HR?
The NT5AD512M16C4-JR and NT5AD512M16C4-HR are both 8Gb DDR4 SDRAM from Nanya, but they differ in speed grade and temperature range. The -JR suffix typically indicates a specific speed/temperature bin (e.g., DDR4-3200, 0-95°C), while -HR may have different timing parameters. Consult the datasheets for exact differences.
When should I choose NT5AD512M16C4-JR over MT40A512M16TB-062E:R?
Choose NT5AD512M16C4-JR when you need a cost-effective 8Gb DDR4-3200 component with Nanya's proven reliability and availability from LCSC and other distributors. If you require Micron's specific qualification or have existing designs with Micron, the MT40A512M16TB-062E:R may be preferable. Both are drop-in compatible in TFBGA-96.
What is the best drop-in replacement for NT5AD512M16C4-JR?
The best drop-in replacement is the Micron MT40A512M16TB-062E:R, which is pin-compatible and has identical density, organization, and speed. Other options include Samsung K4A8G165WB-BCTD and SK Hynix H5AN8G6NCJR-xxC, both 8Gb DDR4-3200 in TFBGA-96. Always verify timing parameters and temperature grades.
Where can I download the NT5AD512M16C4-JR datasheet PDF?
The NT5AD512M16C4-JR datasheet is available for free download from LCSC at https://www.lcsc.com/datasheet/C24169788.pdf. It is also available on Nanya's official product page and other distributor sites like Win Source and Jotrin. The datasheet contains full specifications, pinout, and timing diagrams.
Where can I find the NT5AD512M16C4-JR pinout?
The pinout for NT5AD512M16C4-JR is provided in the official datasheet, which is available from LCSC and Nanya. The TFBGA-96 package has a specific ball assignment for address, data, control, and power pins. Refer to the datasheet's pin configuration section for the exact ball map.
Is NT5AD512M16C4-JR the same as MT40A512M16TB-062E:R?
No, they are not the same part, but they are functionally equivalent. Both are 8Gb DDR4-3200 SDRAM organized as 512Mx16 in TFBGA-96. The NT5AD512M16C4-JR is from Nanya, while MT40A512M16TB-062E:R is from Micron. They are pin-compatible and can be used as drop-in replacements, but verify timing and temperature specs.
What are the key specifications of NT5AD512M16C4-JR that engineers should know?
Engineers should know that NT5AD512M16C4-JR is an 8Gb DDR4 SDRAM with 512Mx16 organization, operating at 1.2V and supporting DDR4-3200 data rates. It features auto self-refresh, built-in temperature sensor, ZQ calibration, and CRC. The package is TFBGA-96, and the temperature range is 0°C to +95°C. These specs are critical for memory subsystem design.
What is the best Samsung equivalent for NT5AD512M16C4-JR?
The best Samsung equivalent is the K4A8G165WB-BCTD, which is an 8Gb DDR4-3200 SDRAM organized as 512Mx16 in a 96-ball FBGA package. It is pin-compatible and offers similar performance. Other Samsung options include K4A8G165WB-BCRC and K4A8G165WC-BCTD, but verify timing parameters for your application.

Technische Referenzdaten für NT5AD512M16C4-JR – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the NT5AD512M16C4-JR when you need a reliable, cost-effective 8Gb DDR4-3200 component for consumer, industrial, or networking applications. It offers a built-in temperature sensor and CRC for enhanced reliability. If you require a specific speed bin or have existing designs with Nanya, the -HR variant may be suitable. For applications where Micron's ecosystem or qualification is preferred, the MT40A512M16TB-062E:R is a drop-in alternative. Samsung and SK Hynix parts are also compatible but verify timing parameters. For high-volume production, consider availability and lead times from multiple distributors.

Vergleich mit Alternativen

Parameter Dieses Produkt NT5AD512M16C4-HR MT40A512M16TB-062E K4A8G165WB-BCTD H5AN8G6NCJR-xxC
Package TFBGA-96 TFBGA-96 R: TFBGA-96 TFBGA-96 TFBGA-96
Brand Nanya Technology Nanya Technology R: Micron Technology Samsung Electronics SK Hynix
Density 8 Gbit 8 Gbit R: 8 Gbit 8 Gbit 8 Gbit
Organization 512M x16 512M x16 R: 512M x16 512M x16 512M x16
Data Rate DDR4-3200 DDR4-3200 R: DDR4-3200 DDR4-3200 DDR4-3200
Supply Voltage 1.2V 1.2V R: 1.2V 1.2V 1.2V

Wichtigste Unterscheidungsmerkmale

  • Cost-effective 8Gb DDR4-3200 solution (vs. MT40A512M16TB-062E:R)
  • Built-in temperature sensor (vs. K4A8G165WB-BCTD)
  • CRC function for data integrity (vs. H5AN8G6NCJR-xxC)

Designhinweise

For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 25-40 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power input. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.

The NT5AD512M16C4-JR has a maximum operating temperature of +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, monitor the built-in temperature sensor to prevent overheating and implement thermal throttling if necessary.

The device requires a 1.2V VDD and a 2.5V VPP supply. Use low-noise LDOs or DC-DC converters with proper filtering. The VPP supply must be stable and within the specified range to ensure reliable wordline operation. Add a 0.1uF capacitor close to each VPP pin. Also, ensure the VDDQ supply (1.2V) is clean to maintain signal integrity on the data bus.

Compliance-Informationen

RoHS
Compliant
REACH
Unknown
AEC-Q100
Bleifrei
Halogenfrei
Unknown
Konfliktmineralien
Unknown

RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.

Daten verifiziert am: 2026-08-19 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

Ähnliche Suchanfragen

NT5AD512M16C4-JR datasheet NT5AD512M16C4-JR price NT5AD512M16C4-JR buy NT5AD512M16C4-JR equivalent NT5AD512M16C4-JR vs MT40A512M16TB-062E:R 8Gb DDR4-3200 SDRAM TFBGA-96 Nanya DDR4 memory for networking NT5AD512M16C4-JR pinout NT5AD512M16C4-JR in stock NT5AD512M16C4-JR lead time

Verwandte Bauteile & Begriffe

Nanya Technology NT5AD512M16C4-JR DDR4 SDRAM SDRAM Memory IC TFBGA-96 BGA Surface Mount 1.2V DDR4-3200 8Gbit 512M x16 Auto Self-Refresh Built-in Temperature Sensor ZQ Calibration CRC RoHS LCSC Win Source Jotrin Vyrian Micron Technology MT40A512M16TB-062E:R Samsung Electronics K4A8G165WB-BCTD SK Hynix H5AN8G6NCJR-xxC
Schnellangebot-RFQ
Geben Sie alle Details an – unser Vertriebsteam antwortet innerhalb von 24 Stunden
Teilenummer Hersteller Gehäuse QTY Zielpreis Gesamt
Gesamt: $0.00 USD
✓
Angebotsanfrage gesendet!

Wir antworten innerhalb von 24 Stunden auf Ihre E-Mail

1
RFQ gesendet
2
Angebot erhalten
3
Bestellung aufgegeben
4
Zahlung
5
Versandt
6
Geliefert
RFQ-Details ansehen