MT40A512M8RH-083E vs H5AN4G8NBJR-RDC Vergleich
Detaillierter Direktvergleich von MT40A512M8RH-083E von Micron Technology und H5AN4G8NBJR-RDC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MT40A512M8RH-083E | H5AN4G8NBJR-RDC |
|---|---|---|
| Marke | Micron Technology | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,30 | $2,95 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | Auto-refresh and self-refresh |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal, adjustable generation | — |
| Betriebstemperatur | 0C to +95C | — |
| Gehäuse | 78-ball FBGA (9 x 10.5 mm) | 78-ball FBGA |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| RoHS-Status | Compliant | Lead-Free & Halogen-Free (RoHS Compliant) |
| CAS-Latenz | [DATA_NEEDED: CAS latency per speed bin table] | — |
| Schnittstelle | — | DDR4 (Double Data Rate IV) |
| Montageart | — | Surface Mount |
| Versorgungsspannung | — | [DATA_NEEDED: VDD supply voltage] |
| Datenrate | — | [DATA_NEEDED: speed grade Mbps] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |