MT40A512M8RH-083E vs H5AN4G8NBJR-UHI Vergleich
Detaillierter Direktvergleich von MT40A512M8RH-083E von Micron Technology und H5AN4G8NBJR-UHI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MT40A512M8RH-083E | H5AN4G8NBJR-UHI |
|---|---|---|
| Marke | Micron Technology | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,30 | $2,25 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | Self-refresh and auto-refresh support |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal, adjustable generation | — |
| Betriebstemperatur | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78-ball FBGA (9 x 10.5 mm) | FBGA-78 (78-ball fine-pitch BGA) |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| CAS-Latenz | [DATA_NEEDED: CAS latency per speed bin table] | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Montageart | — | Surface Mount |
| Grade | — | Industrial (-UHI suffix) |
| Datenrate | — | 2400 MT/s |
| Schnittstelle | — | JEDEC DDR4 SDRAM |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |