MT40A512M8RH-083E vs H5AN4G8NBJR-UHI 对比

详细并排对比 MT40A512M8RH-083E 出自 Micron Technology 和 H5AN4G8NBJR-UHI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M8RH-083E MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron

MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron

MT40A512M8RH-083E ✓ 量产中
SK hynix
H5AN4G8NBJR-UHI H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

H5AN4G8NBJR-UHI ✓ 量产中

规格对比

参数 MT40A512M8RH-083E H5AN4G8NBJR-UHI
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.30 $2.25
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
存储组织 512M x 8 512M x 8
Industry Speed Grade DDR4-2400 —
Clock Rate 1.2 GHz —
Internal Banks 8 banks (2 groups of 4) —
Prefetch 8n-bit —
Refresh 64 ms, 8192-cycle refresh (to 95C) Self-refresh and auto-refresh support
VDD / VDDQ 1.2 V +/-60 mV —
VPP 2.5 V, -125 mV/+250 mV —
I/O Structure 1.2 V pseudo open-drain —
VREFDQ On-die internal, adjustable generation —
工作温度 0C to +95C [DATA_NEEDED: operating temperature range]
封装 78-ball FBGA (9 x 10.5 mm) FBGA-78 (78-ball fine-pitch BGA)
FBGA Code D9TGG —
Marking Code D9TGG —
Data Strobe Preamble Programmable —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
CAS 延迟 [DATA_NEEDED: CAS latency per speed bin table] [DATA_NEEDED: CAS latency at DDR4-2400]
Speed Grade — DDR4-2400 (PC4-19200)
Supply Voltage (VDD) — 1.2 V
安装类型 — Surface Mount
Grade — Industrial (-UHI suffix)
数据速率 — 2400 MT/s
接口 — JEDEC DDR4 SDRAM
Bank Architecture — DDR4 bank group architecture
Termination — On-die termination (ODT)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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