MT53E128M32D2DS-046 vs MT53D512M32D2DS-053 WT:D Vergleich
Detaillierter Direktvergleich von MT53E128M32D2DS-046 von Micron Technology und MT53D512M32D2DS-053 WT:D von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53E128M32D2DS-046 - 4Gb LPDDR4 SDRAM 200-WFBGA | Micron
MT53E128M32D2DS-046 ObsoleteMicron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ AktivSpezifikationsvergleich
| Parameter | MT53E128M32D2DS-046 | MT53D512M32D2DS-053 WT:D |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $6,05 |
| Speichertyp | Mobile LPDDR4 SDRAM (LPDDR4/LPDDR4X unified) | SDRAM - Mobile LPDDR4 |
| Density | 4 Gbit | — |
| Speicherorganisation | 128M x 32 | 512M x 32 |
| Datenbusbreite | 32 bit | 32 bit |
| Datenrate | 2.133 GHz (speed bin -046) | — |
| Maximum Clock Rate | 4166 MHz (per Arrow listing) | — |
| Configuration | DDP (Double-Die Package) | — |
| Gehäuse | 200-WFBGA (10 mm x 14.5 mm) | 200-WFBGA (10 mm x 14.5 mm) |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| Operating Temperature (AAT grade) | -40C to +105C | — |
| Operating Temperature (AIT grade) | -40C to +95C | — |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Dry pack, Tape and Reel | — |
| ECCN (US) | EAR99 | — |
| HTS | 8542.32.00.28 | — |
| Automotive Qualification | Yes (per Arrow listing for AAT:A) | — |
| RoHS-Status | EU RoHS Compliant | RoHS Compliant (per DigiKey listing) |
| Part Status | Obsolete (per Arrow listing) | — |
| Speichergröße | — | 16 Gbit (2 GB) |
| Clock Frequency / Data Rate | — | 1.866 GHz (1866 MT/s) |
| Die Configuration | — | DDP (Double Die Package) |
| Betriebstemperatur | — | -40C to +85C |
| Speed Grade | — | -053 |
| Eigenschaften | — | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| Memory Interface | — | Parallel, LPDDR4 |
| Self-Refresh | — | Auto self-refresh with temperature-compensated refresh |
| Refresh | — | Auto refresh and self refresh |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |