MT53E128M32D2DS-046 vs MT53D512M32D2DS-053 WT:D 对比

详细并排对比 MT53E128M32D2DS-046 出自 Micron Technology 和 MT53D512M32D2DS-053 WT:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E128M32D2DS-046 MT53E128M32D2DS-046 - 4Gb LPDDR4 SDRAM 200-WFBGA | Micron

MT53E128M32D2DS-046 - 4Gb LPDDR4 SDRAM 200-WFBGA | Micron

MT53E128M32D2DS-046 Obsolete
Micron Technology
MT53D512M32D2DS-053 WT:D MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron

MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron

MT53D512M32D2DS-053 WT:D ✓ 量产中

规格对比

参数 MT53E128M32D2DS-046 MT53D512M32D2DS-053 WT:D
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $0.00 $6.05
存储器类型 Mobile LPDDR4 SDRAM (LPDDR4/LPDDR4X unified) SDRAM - Mobile LPDDR4
Density 4 Gbit —
存储组织 128M x 32 512M x 32
数据总线宽度 32 bit 32 bit
数据速率 2.133 GHz (speed bin -046) —
Maximum Clock Rate 4166 MHz (per Arrow listing) —
Configuration DDP (Double-Die Package) —
封装 200-WFBGA (10 mm x 14.5 mm) 200-WFBGA (10 mm x 14.5 mm)
VDDQ (LPDDR4X mode) 0.6 V —
VDDQ (LPDDR4 mode) 1.10 V —
Operating Temperature (AAT grade) -40C to +105C —
Operating Temperature (AIT grade) -40C to +95C —
安装类型 Surface Mount Surface Mount
Packaging Dry pack, Tape and Reel —
ECCN (US) EAR99 —
HTS 8542.32.00.28 —
Automotive Qualification Yes (per Arrow listing for AAT:A) —
RoHS 状态 EU RoHS Compliant RoHS Compliant (per DigiKey listing)
Part Status Obsolete (per Arrow listing) —
存储容量 — 16 Gbit (2 GB)
Clock Frequency / Data Rate — 1.866 GHz (1866 MT/s)
Die Configuration — DDP (Double Die Package)
工作温度 — -40C to +85C
Speed Grade — -053
特性 — Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask
Memory Interface — Parallel, LPDDR4
Self-Refresh — Auto self-refresh with temperature-compensated refresh
Refresh — Auto refresh and self refresh
电源电压 — [DATA_NEEDED: VDD/VDDQ supply voltage]

数据手册与资源

浏览全部产品 创建 BOM 获取报价