MT53E1G32D2FW-046 AUT:B vs MT53E512M32D2FW-046 AAT:D Vergleich
Detaillierter Direktvergleich von MT53E1G32D2FW-046 AUT:B von Micron Technology und MT53E512M32D2FW-046 AAT:D von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MT53E1G32D2FW-046 AUT:B ✓ AktivMicron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ AktivSpezifikationsvergleich
| Parameter | MT53E1G32D2FW-046 AUT:B | MT53E512M32D2FW-046 AAT:D |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $273,51 | $13,75 |
| Speichertyp | SDRAM - Mobile LPDDR4X | SDRAM - Mobile LPDDR4/LPDDR4X |
| Speichergröße | 32 Gbit (4 GB) | 16 Gbit |
| Speicherorganisation | x32 Parallel | 512M x 32 |
| Clock Frequency | 2.133 GHz | 2133 MHz (2.133 GHz) |
| Access Time / Clock Cycle | 3.5 ns | — |
| Schnittstelle | Parallel | Parallel |
| Gehäuse | 200-TFBGA (10 mm x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| Betriebstemperatur | -40C to +125C | -40C to +105C (AAT:D grade) |
| Temperature Grade | Automotive (AUT) | — |
| Self-Refresh | Auto self-refresh | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Montageart | Surface Mount | Surface Mount |
| VDDQ Supply Voltage | [DATA_NEEDED: VDDQ supply voltage] | — |
| VDD Supply Voltage | [DATA_NEEDED: VDD supply voltage] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Cycle Time | — | 3.5 ns |
| Supply Voltage VDD | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | — | 0.6 V |
| Core Voltage VDD2 | — | 1.8 V |
| Automotive Qualification | — | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | — | -046 (2133) |