MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
Teilenummer: MT53E512M32D2FW-046 AAT:D ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $17.2 | $172,00 |
| 100 | $15.8 | $1.580,00 |
| 500 | $14.6 | $7.300,00 |
| 1.000 | $13.75 | $13.750,00 |
MT53E512M32D2FW-046 AAT:D Übersicht
Mobile LPDDR (Low Power Double Data Rate) SDRAM is a class of DRAM optimized for low power consumption and high bandwidth in battery-powered and thermally constrained systems. Within the memory hierarchy, LPDDR4 sits under synchronous DRAM and power-management-aware memory ICs, and the unified LPDDR4/LPDDR4X die family allows the same hardware to run at 1.10V VDDQ (LPDDR4) or 0.60V VDDQ (LPDDR4X), dramatically reducing I/O power.
Key features include a 16Gbit density in a single x32 die, 2133 MHz clock support (3.5 ns cycle time), dual-voltage operation covering both LPDDR4 and LPDDR4X protocols, and automotive-grade screening in the AAT:D temperature grade with operation from -40C to +105C.
The die uses Micron LPDRAM process technology with bank-group architecture supporting eight internal banks, on-die termination, and standard LPDDR4 command timing per the JEDEC LPDDR4 interface (referenced generically per the manufacturer datasheet). The FW package's 10 mm x 14.5 mm footprint keeps routing short for high-speed 32-bit data buses in compact layouts.
Typical applications include automotive infotainment and ADAS vision platforms, industrial HMI and edge-AI gateways, and high-performance embedded computing modules where 4 GB-class DRAM with low idle power is required.
Design consideration: VDDQ selection (0.60V for LPDDR4X vs 1.10V for LPDDR4) must match the SoC memory controller configuration, and fly-by command/address routing requires per-byte line termination.
This page synthesizes distributor availability, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet. Pricing as of 2026-09-02.
Drop-in-Alternativen für MT53E512M32D2FW-046 AAT:D – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT53E512M32D2FW-046 AAT:D (gleiche Bauform und Footprint) – abweichend in Memory Type, Organization, Clock Frequency, Memory Size, Package.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT53E512M32D2FW-046 AIT:D
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E512M32D2FW-046 AUT:D
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E512M32D2FW-046 WT:D
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E1G32D2FW-046 AUT:B
✅ Drop-In✓ Auf Lager
$273.51 / Stück
Datenblatt ansehen →MT53E512M32D2FW-046 AAT:D Grenzwerte & elektrische Eigenschaften
| Speichertyp | SDRAM - Mobile LPDDR4/LPDDR4X |
| Speichergröße | 16 Gbit |
| Speicherorganisation | 512M x 32 |
| Schnittstelle | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) |
| Cycle Time | 3.5 ns |
| Supply Voltage VDD | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | 0.6 V |
| Core Voltage VDD2 | 1.8 V |
| Betriebstemperatur | -40C to +105C (AAT:D grade) |
| Gehäuse | 200-TFBGA (10 mm x 14.5 mm) |
| Montageart | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | -046 (2133) |
MT53E512M32D2FW-046 AAT:D 200-tfbga (10 mm x 14.5 mm) Pinbelegungsleitfaden
Pinbelegung für MT53E512M32D2FW-046 AAT:D (200-tfbga (10 mm x 14.5 mm)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für MT53E512M32D2FW-046 AAT:D.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MT53E512M32D2FW-046 AAT:D ist geeignet für 6 Anwendungs: Automotive ADAS Vision Processing, Automotive Infotainment and Cockpit, Industrial Edge-AI Gateways, Embedded Computing Modules (COM/SOM), Battery-Powered Mobile and Rugged Handheld Devices, Networking and 5G Small-Cell Equipment.
Automotive ADAS Vision Processing
The MT53E512M32D2FW-046 AAT:D fits ADAS camera and sensor-fusion platforms because its 16Gbit (512M x 32) density buffers multiple high-resolution image frames while the 2133 MT/s interface supplies roughly 21.3 GB/s of read bandwidth on a x32 bus, enough for real-time object-detection pipelines. The AAT:D -40C to +105C temperature grade and AEC-Q100 screening on related suffixes (AUT:D) address under-hood and zone-controller thermal environments. Implemented as the main frame-buffer DRAM behind an ADAS SoC, it typically runs in LPDDR4X mode at 0.6V VDDQ to cut I/O power, an important benefit in always-on camera systems; the trade-off is that LPDDR4X mode must be supported by the SoC memory controller and verified during controller training at temperature extremes.
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Automotive Infotainment and Cockpit
In digital-cockpit and infotainment head units, the MT53E512M32D2FW-046 provides 4 GB-class DRAM for graphics frame buffers, navigation map tiles, and multimedia decode buffers. Its 2133 MHz clock and 512M x32 organization match the 32-bit LPDDR4 buses of common automotive display SoCs, and the unified LPDDR4/LPDDR4X die lets one PCB serve both cost-optimized (1.1V VDDQ) and power-optimized (0.6V VDDQ) platform variants. The 10 mm x 14.5 mm 200-TFBGA footprint keeps routing short behind the display driver path, supporting the tight impedance control needed at 2133 MT/s. Performance consideration: at this data rate, fly-by routing, per-device termination, and reference-voltage layout quality determine eye margins, so stackup and length matching must follow the controller vendor's memory design guide.
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Industrial Edge-AI Gateways
Industrial edge-AI gateways and machine-vision controllers use the MT53E512M32D2FW-046 as main memory for model inference buffers and network packet queues. The 16Gbit density supports quantized CNN feature maps for several concurrent streams, while 2133 MT/s bandwidth prevents the DRAM from becoming the inference bottleneck on mid-range MPUs. The industrial-relevant AIT:D sibling shares the identical footprint, letting a single PCB serve commercial and extended-temperature SKUs. In LPDDR4X mode, the 0.6V VDDQ rail substantially lowers I/O power versus LPDDR4 1.1V operation, which reduces heatsinking in sealed fanless enclosures. Design consideration: long-lifetime industrial programs should qualify both the AAT:D and AIT:D suffixes with their memory-controller configuration to keep a dual-source lifecycle path open.
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Embedded Computing Modules (COM/SOM)
Computer-on-modules and system-on-modules embed the MT53E512M32D2FW-046 as soldered-down LPDDR4 to avoid connectorized SODIMMs in vibration-prone environments. The 512M x 32 organization pairs naturally with 32-bit or 64-bit memory controllers (two devices in 32-bit dual-channel), and the unified LPDDR4/LPDDR4X die allows one module layout to be marketed at different power/performance points by changing only the VDDQ rail setting and controller firmware. At 2133 MT/s the package contributes low trace stubs on a compact SOM PCB, easing length matching within the module's restricted layer count. Trade-off: soldered memory means capacity is fixed at manufacture, so the WT:D 8Gbit and MT53E1G32D2FW 32Gbit footprint-compatible variants serve as down- and up-pop options on the same PCB.
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Battery-Powered Mobile and Rugged Handheld Devices
Rugged handhelds, portable test instruments, and mobile data terminals benefit from the LPDDR4X heritage of the MT53E512M32D2FW-046: in 0.6V VDDQ mode the I/O power is a fraction of conventional DDR3L, extending battery runtime in always-on monitoring tasks. The 16Gbit capacity supports map caching, log buffering, and GUI frame stores for 5-to-7-inch displays, while the 2133 MHz interface keeps application responsiveness high. Because the die is a unified LPDDR4/LPDDR4X product per the Micron datasheet, a design can initialize in LPDDR4 (1.1V) for maximum compatibility and migrate to LPDDR4X (0.6V) via a firmware and power-tree update without respinning the PCB. Thermal consideration: self-refresh current during standby dominates average drain in duty-cycled devices and should be measured across temperature.
Empfohlen
Networking and 5G Small-Cell Equipment
5G small cells, industrial routers, and network appliances use the MT53E512M32D2FW-046 as packet-buffer and control-plane memory. The 2133 MT/s x32 interface delivers the random-access throughput needed for descriptor rings and traffic statistics on embedded network processors, and the 16Gbit density covers deep packet buffers during burst aggregation. The device's low-voltage LPDDR4X operation helps meet the aggressive power budgets of passive-cooled outdoor small cells, where every watt affects thermal design and OPEX. The -046 speed grade is pin- and footprint-compatible with other MT53E FW-package speed bins, allowing cost/performance tuning at production. Layout consideration: keep the 1.1V VDD and 0.6V VDDQ rails tightly regulated with low-ESR bulk and per-ball decoupling, as LPDDR4 termination current transients are fast and rail droop directly degrades timing margin.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT53E512M32D2FW-046 AAT:D – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT53E512M32D2FW-046 AIT:D | MT53E512M32D2FW-046 AUT:D | MT53E512M32D2FW-046 WT:D | MT53E1G32D2FW-046 AUT:B |
|---|---|---|---|---|---|
| Package | 200-TFBGA (10x14.5) | 200-TFBGA (10x14.5) - same | 200-TFBGA (10x14.5) - same | 200-TFBGA (10x14.5) - same | 200-TFBGA (FW family) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 8 Gbit | 32 Gbit |
| Organization | 512M x 32 | 512M x 32 | 512M x 32 | 256M x 32 | 1G x 32 |
| Data Rate | 2133 MT/s | 2133 MT/s | 2133 MT/s | 2133 MT/s | 2133 MT/s |
| VDDQ (LPDDR4X mode) | 0.6 V | 0.6 V | 0.6 V | 0.6 V | 0.6 V |
| Temperature Grade | -40C to +105C (AT) | Industrial (IT) | -40C to +105C, AEC-Q100 | Commercial/WT grade | Automotive (AUT:B) |
Wichtigste Unterscheidungsmerkmale
- Automotive screening with 16Gbit density (vs. MT53E512M32D2FW-046 WT:D)
- Unified LPDDR4/LPDDR4X die enables power re-optimization (vs. MT53D1024M32D4DT-046 AAT:D (obsolete MT53D generation))
- Trade-off: industrial-grade variant costs less (vs. MT53E512M32D2FW-046 AIT:D)
Designhinweise
The MT53E512M32D2FW-046 requires three rails: VDD 1.1V, VDD2 1.8V, and VDDQ set to 0.6V for LPDDR4X or 1.1V for LPDDR4 operation. Verify the SoC memory controller supports the chosen VDDQ mode before fixing the power tree. Follow the Micron datasheet power-up sequencing section; LPDDR4 devices require VDD before or together with VDDQ and a controlled reset release. Per-rail decoupling should follow the datasheet's decoupling guidance, with low-ESR bulk capacitance near the package because termination current transients at 2133 MT/s are fast and rail droop directly erodes timing margin.
Route the 32-bit data bus as length-matched groups per byte lane with on-die termination enabled, and use fly-by routing for command/address/clock with a single termination reference. Keep trace impedance at the controller vendor's specified single-ended/differential targets (typical 40-50 ohm single-ended for LPDDR4 class designs) and keep skew within the controller design guide limits. The 10 mm x 14.5 mm TFBGA allows short stubs; place the DRAM within a few centimeters of the SoC and reserve inner layers as solid reference planes under all memory nets.
Do not interchange ordering suffixes casually: the WT:D variant is 8Gbit, not 16Gbit, so a BOM substitution halves capacity and breaks memory maps expecting 512M x 32. The AAT:D versus AIT:D versus AUT:D suffixes denote different screening flows; automotive programs requiring AEC-Q100 traceability should specify AUT:D or confirm AAT:D qualification documentation with Micron. Finally, controller training parameters are die- and density-specific - re-run LPDDR4 read/write leveling and DQS gate training whenever the DRAM MPN, density, or VDDQ mode changes.
Estimated: LPDDR4 package power in active read/write at 2133 MT/s is typically on the order of several hundred milliwatts depending on utilization and VDDQ mode; in the 200-TFBGA with a ground-ball array soldered to a multilayer board, board copper acts as the primary heat path. For sealed automotive/industrial encodings, verify junction temperature using the datasheet thermal resistance values with your worst-case utilization profile at maximum ambient (up to +105C for automotive grades) rather than relying on typical lab measurements.
Compliance-Informationen
AEC-Q100 qualification verified for the AUT:D variant via datasheets.com parametric data; AAT:D is an automotive-temperature grade per Micron catalog. RoHS/REACH/halogen status must be confirmed on the official Micron part-detail page compliance documents.
