N25Q032A13EV7A0 vs N25Q256A13E12A0F Vergleich
Detaillierter Direktvergleich von N25Q032A13EV7A0 von Micron Technology und N25Q256A13E12A0F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | N25Q032A13EV7A0 | N25Q256A13E12A0F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | EEPROM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,35 | $0,00 |
| Speichertyp | NOR Flash (SPI) | NOR Flash, Serial SPI |
| Density | 32 Mbit (4 MB) | 256 Mbit (32 MB) |
| Speicherorganisation | 8M x 4 die | 64M x 4 (Mouser listing); 32M x 8 per FindIC listing - see validation note |
| Schnittstelle | SPI | — |
| Max Clock Frequency | 108 MHz | — |
| Versorgungsspannung | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | VDFPN8 (8-lead MLP8) | 24-ball T-PBGA (6x8 mm) |
| Montageart | Surface Mount | Surface Mount |
| Memory Format | Flash (NOR) | — |
| Write Cycle Endurance | [DATA_NEEDED: endurance cycles] | — |
| Access Time | [DATA_NEEDED: read access time] | 8 ns (per FindIC listing) |
| Program/Erase Modes | Page program, sector erase, bulk erase | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: MSL] | — |
| Packaging | Tape & Reel (tray options may exist) | Tape & Reel (TR suffix) |
| Max SPI Clock Frequency | — | 108 MHz |
| I/O Modes | — | Single, Dual, Quad I/O (Multiple I/O Serial Flash) |
| Technology | — | SLC (Single-Level Cell) |
| Sector Erase Size | — | 4 KB |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Active Read Current | — | [DATA_NEEDED: ICC read current] |
| Standby Current | — | [DATA_NEEDED: ICC standby current] |