N25Q256A13E12A0F vs N25Q032A13EV7A0 Vergleich
Detaillierter Direktvergleich von N25Q256A13E12A0F von Micron Technology und N25Q032A13EV7A0 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | N25Q256A13E12A0F | N25Q032A13EV7A0 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | EEPROM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $1,35 |
| Speichertyp | NOR Flash, Serial SPI | NOR Flash (SPI) |
| Density | 256 Mbit (32 MB) | 32 Mbit (4 MB) |
| Speicherorganisation | 64M x 4 (Mouser listing); 32M x 8 per FindIC listing - see validation note | 8M x 4 die |
| Versorgungsspannung | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Max SPI Clock Frequency | 108 MHz | — |
| I/O Modes | Single, Dual, Quad I/O (Multiple I/O Serial Flash) | — |
| Technology | SLC (Single-Level Cell) | — |
| Sector Erase Size | 4 KB | — |
| Gehäuse | 24-ball T-PBGA (6x8 mm) | VDFPN8 (8-lead MLP8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Access Time | 8 ns (per FindIC listing) | [DATA_NEEDED: read access time] |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (tray options may exist) |
| Program/Erase Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Data Retention | [DATA_NEEDED: data retention years] | — |
| Active Read Current | [DATA_NEEDED: ICC read current] | — |
| Standby Current | [DATA_NEEDED: ICC standby current] | — |
| Schnittstelle | — | SPI |
| Max Clock Frequency | — | 108 MHz |
| Memory Format | — | Flash (NOR) |
| Write Cycle Endurance | — | [DATA_NEEDED: endurance cycles] |
| Program/Erase Modes | — | Page program, sector erase, bulk erase |
| MSL-Level | — | [DATA_NEEDED: MSL] |