NRVBS260NT3G vs MBRS260T3G Vergleich

Detaillierter Direktvergleich von NRVBS260NT3G von onsemi und MBRS260T3G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter NRVBS260NT3G MBRS260T3G
Marke onsemi onsemi
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,13 $0,15
Manufacturer onsemi —
Product Type Schottky Power Rectifier —
Peak Repetitive Reverse Voltage (VRRM) 60 V —
Average Rectified Forward Current (IF(AV)) 2 A —
Forward Voltage Drop (VF) at 2 A 630 mV —
Peak Forward Surge Current (IFSM) [DATA_NEEDED: IFSM value] —
Reverse Leakage Current (IR) at VRRM [DATA_NEEDED: IR value] —
Betriebs-Sperrschichttemperaturbereich -55 C to +150 C (est. industry-standard for SMB Schottky) —
Gehäuse SMB (DO-214AA) SMB (DO-214AA-style surface mount)
Montageart Surface Mount Surface Mount
Construction Epitaxial with oxide passivation and metal overlay contact Epitaxial with oxide passivation and metal overlay contact
Configuration Single diode —
Polarity Cathode band Color band indicates cathode
MSL-Level 1 (per third-party listing) 1 per JEDEC J-STD-020
RoHS-Status Compliant (ROHS3) Compliant
REACH Status Unaffected (per third-party listing) Compliant
Diode Type — Schottky Power Rectifier (single)
DC Reverse Voltage (Vr) Max — 60 V
Average Rectified Forward Current (Io) — 2 A
Forward Voltage (Vf) Max @ If — 630 mV @ 2 A
Peak Non-Repetitive Surge Current (Ifsm) — 25 A (8.3 ms half-sine, per datasheet)
Reverse Recovery Time (trr) — Negligible (Schottky, minority-carrier device)
Betriebs-Sperrschichttemperatur — -65C to +150C
Storage Temperature — -65C to +150C
Primary Applications — Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection

Datenblätter & Ressourcen

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