NRVBS260NT3G vs MBRS260T3G 비교

다음의 상세 나란히 비교: NRVBS260NT3G 제조: onsemi 및 MBRS260T3G 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 NRVBS260NT3G MBRS260T3G
브랜드 onsemi onsemi
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.13 $0.15
Manufacturer onsemi —
Product Type Schottky Power Rectifier —
Peak Repetitive Reverse Voltage (VRRM) 60 V —
Average Rectified Forward Current (IF(AV)) 2 A —
Forward Voltage Drop (VF) at 2 A 630 mV —
Peak Forward Surge Current (IFSM) [DATA_NEEDED: IFSM value] —
Reverse Leakage Current (IR) at VRRM [DATA_NEEDED: IR value] —
동작 접합 온도 범위 -55 C to +150 C (est. industry-standard for SMB Schottky) —
패키지 SMB (DO-214AA) SMB (DO-214AA-style surface mount)
실장 유형 Surface Mount Surface Mount
Construction Epitaxial with oxide passivation and metal overlay contact Epitaxial with oxide passivation and metal overlay contact
Configuration Single diode —
Polarity Cathode band Color band indicates cathode
MSL 레벨 1 (per third-party listing) 1 per JEDEC J-STD-020
RoHS 상태 Compliant (ROHS3) Compliant
REACH Status Unaffected (per third-party listing) Compliant
Diode Type — Schottky Power Rectifier (single)
DC Reverse Voltage (Vr) Max — 60 V
Average Rectified Forward Current (Io) — 2 A
Forward Voltage (Vf) Max @ If — 630 mV @ 2 A
Peak Non-Repetitive Surge Current (Ifsm) — 25 A (8.3 ms half-sine, per datasheet)
Reverse Recovery Time (trr) — Negligible (Schottky, minority-carrier device)
동작 접합 온도 — -65C to +150C
Storage Temperature — -65C to +150C
Primary Applications — Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection

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