RTAX1000S-LG624V vs RTAX2000S-LG624V Vergleich
Detaillierter Direktvergleich von RTAX1000S-LG624V von Microchip Technology und RTAX2000S-LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-LG624V ✓ AktivMicrochip Technology
RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-LG624V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX1000S-LG624V | RTAX2000S-LG624V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2.600,00 | $1,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | RTAX-S/SL Radiation-Tolerant FPGAs |
| Equivalent System Gates | 1,000,000 | 2,000,000 gates |
| Logic Cells | 18144 | 32,256 |
| Configurable Logic Blocks (CLBs) | 12096 | 21,504 |
| Technology | Digital CMOS, antifuse-based | — |
| Core Supply Voltage | 1.5 V (nominal) | — |
| Configuration Type | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | up to 540 kbits SRAM |
| Gehäuse | CG624 (624-pin ceramic column grid array, LG624) | CG624 ceramic column grid array (LG624) |
| Betriebstemperatur | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Application Domain | Space-flight systems, radiation-tolerant | — |
| Maximum Family Density | 4,000,000 equivalent system gates (family) | — |
| Montageart | Surface Mount | — |
| Number of User I/O | [DATA_NEEDED: number of user I/O for LG624 package] | — |
| Block RAM Capacity | [DATA_NEEDED: embedded SRAM bit capacity] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| Memory Protection | — | optional EDAC protection |
| User I/Os | — | up to 684 |
| Program Technology | — | Nonvolatile antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Parametric) | — | 200 krad |
| SEU Rate | — | < 1E-10 errors per bit-day |
| Base Commercial Family | — | Axcelerator |
| Primary Application Domain | — | Space-flight systems |
| Versorgungsspannung | — | [DATA_NEEDED: core and I/O supply voltage] |