RTAX1000S-LG624V vs RTAX2000S-LG624V Comparação

Comparação detalhada lado a lado de RTAX1000S-LG624V por Microchip Technology e RTAX2000S-LG624V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX1000S-LG624V RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V ✓ Ativo
Microchip Technology
RTAX2000S-LG624V RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-LG624V ✓ Ativo

Comparação de especificações

Parâmetro RTAX1000S-LG624V RTAX2000S-LG624V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $2.600,00 $1,00
Family RTAX-S/SL Radiation-Tolerant FPGA RTAX-S/SL Radiation-Tolerant FPGAs
Equivalent System Gates 1,000,000 2,000,000 gates
Logic Cells 18144 32,256
Configurable Logic Blocks (CLBs) 12096 21,504
Technology Digital CMOS, antifuse-based —
Core Supply Voltage 1.5 V (nominal) —
Configuration Type One-Time Programmable (antifuse), live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic up to 540 kbits SRAM
Encapsulamento CG624 (624-pin ceramic column grid array, LG624) CG624 ceramic column grid array (LG624)
Temperatura de operação -55C to +125C [DATA_NEEDED: operating temperature range]
Application Domain Space-flight systems, radiation-tolerant —
Maximum Family Density 4,000,000 equivalent system gates (family) —
Tipo de montagem Surface Mount —
Number of User I/O [DATA_NEEDED: number of user I/O for LG624 package] —
Block RAM Capacity [DATA_NEEDED: embedded SRAM bit capacity] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Memory Protection — optional EDAC protection
User I/Os — up to 684
Program Technology — Nonvolatile antifuse (one-time programmable)
Power-Up Behavior — Live at power-up
Total Ionizing Dose (Functional) — 300 krad
Total Ionizing Dose (Parametric) — 200 krad
SEU Rate — < 1E-10 errors per bit-day
Base Commercial Family — Axcelerator
Primary Application Domain — Space-flight systems
Tensão de alimentação — [DATA_NEEDED: core and I/O supply voltage]

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