RTAX2000DL-1CQ352V vs RTAX1000SL-CQ352V Vergleich
Detaillierter Direktvergleich von RTAX2000DL-1CQ352V von Microchip Technology und RTAX1000SL-CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ AktivMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000DL-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2.950,00 | $0,00 |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 (approx.) | 1,000,000 |
| Logic Cells | 29,568 | 18,144 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | Digital CMOS | — |
| Programming Technology | Antifuse (one-time programmable) | Antifuse (one-time programmable) |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | Radiation-tolerant, space-flight qualified family |
| Configuration | Live at power-up, no external boot memory | — |
| Speed Grade | -1 | — |
| Gehäuse | CQ352 (352-pin ceramic QFP) | 352-pin Ceramic CQFP (CQ352V) |
| Montageart | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Embedded Memory | — | Embedded SRAM with built-in FIFO control logic |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |