RTAX2000DL-1CQ352V vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX2000DL-1CQ352V par Microchip Technology et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ ActifMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000DL-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2 950,00 | $0,00 |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 (approx.) | 1,000,000 |
| Logic Cells | 29,568 | 18,144 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | Digital CMOS | — |
| Programming Technology | Antifuse (one-time programmable) | Antifuse (one-time programmable) |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | Radiation-tolerant, space-flight qualified family |
| Configuration | Live at power-up, no external boot memory | — |
| Speed Grade | -1 | — |
| Boîtier | CQ352 (352-pin ceramic QFP) | 352-pin Ceramic CQFP (CQ352V) |
| Type de montage | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Embedded Memory | — | Embedded SRAM with built-in FIFO control logic |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |