RTAX2000DL-CQ352B vs RTAX1000SL-CQ352V Vergleich
Detaillierter Direktvergleich von RTAX2000DL-CQ352B von Microchip Technology und RTAX1000SL-CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ AktivMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000DL-CQ352B | RTAX1000SL-CQ352V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 2,000,000 | 1,000,000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 18,144 |
| CLBs | 19,712 | — |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Programming Technology | Nonvolatile antifuse | Antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Gehäuse | 352-terminal ceramic CQFP, metal-sealed | 352-pin Ceramic CQFP (CQ352V) |
| Terminal Pitch | 0.500 mm | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Configuration | Live at power-up, no external boot PROM required | — |
| Application Domain | Space flight systems | — |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |