RTAX2000DL-CQ352B vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX2000DL-CQ352B par Microchip Technology et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ ActifMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000DL-CQ352B | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 2,000,000 | 1,000,000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 18,144 |
| CLBs | 19,712 | — |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Programming Technology | Nonvolatile antifuse | Antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Boîtier | 352-terminal ceramic CQFP, metal-sealed | 352-pin Ceramic CQFP (CQ352V) |
| Terminal Pitch | 0.500 mm | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Configuration | Live at power-up, no external boot PROM required | — |
| Application Domain | Space flight systems | — |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Statut RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |