RTAX2000DL-CQ352V vs RTAX2000D-1CQ352V Vergleich
Detaillierter Direktvergleich von RTAX2000DL-CQ352V von Microchip Technology und RTAX2000D-1CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ AktivMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000DL-CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $3.950,00 |
| Equivalent System Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 29,568 |
| CLBs | 19,712 | 19,712 |
| Technology | CMOS, antifuse (nonvolatile, one-time programmable) | Digital CMOS, antifuse (nonvolatile) |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) | Up to 120 |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Maximum Combinatorial Delay | 1.100 ns | — |
| Total Ionizing Dose (TID) | 300 krad (functional); 200 krad (per family data) | — |
| Gehäuse | CQFP-352, hermetically sealed ceramic, metal-sealed cofired | CQFP-352 (CQ352), ceramic |
| Terminal Pitch | 0.500 mm | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +125C | [DATA_NEEDED: Operating Temperature] |
| Configuration | Live-at-power-up (antifuse, no external boot device) | Live at power-up, single-chip, no external configuration device |
| Family | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) | — |
| Equivalent Gates | — | 2,000,000 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Speed Grade | — | -1 |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| RoHS-Status | — | [DATA_NEEDED: RoHS Status] |