RTAX2000S-1CGS624V vs RTAX2000SL-1CGS624V Vergleich
Detaillierter Direktvergleich von RTAX2000S-1CGS624V von Microchip Technology und RTAX2000SL-1CGS624V von Microsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000S-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CGS624V ✓ AktivMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000S-1CGS624V | RTAX2000SL-1CGS624V |
|---|---|---|
| Marke | Microchip Technology | Microsemi |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3.950,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2,000,000 | 2000000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| Total Logic Cells | 32,256 | — |
| ASIC Gate Capacity (companion) | 250,000 gates | — |
| Core Supply Voltage (nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Logic Family | CMOS | — |
| Speed Grade | -1 | -1 |
| Betriebstemperatur | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | CG624 Ceramic Column Grid Array (CCGA), 624 balls | 624-ball ceramic CGA (CGS624) |
| Montageart | Surface Mount | Surface Mount |
| Programming Technology | Antifuse (one-time programmable) | — |
| SEU Hardening | SEU-hardened registers, immune to single-event upsets | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Configuration | Live at power-up, single-chip (no external config device) | One-time programmable (OTP), live at power-up, single chip |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Weight | [DATA_NEEDED: package weight] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |