RTAX2000S-1CGS624V vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX2000S-1CGS624V par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000S-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CGS624V ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000S-1CGS624V | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 950,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2,000,000 | 2000000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| Total Logic Cells | 32,256 | — |
| ASIC Gate Capacity (companion) | 250,000 gates | — |
| Core Supply Voltage (nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Logic Family | CMOS | — |
| Speed Grade | -1 | -1 |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Boîtier | CG624 Ceramic Column Grid Array (CCGA), 624 balls | 624-ball ceramic CGA (CGS624) |
| Type de montage | Surface Mount | Surface Mount |
| Programming Technology | Antifuse (one-time programmable) | — |
| SEU Hardening | SEU-hardened registers, immune to single-event upsets | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Configuration | Live at power-up, single-chip (no external config device) | One-time programmable (OTP), live at power-up, single chip |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Weight | [DATA_NEEDED: package weight] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |