RTAX2000SL-1CGS624B vs RTAX2000SL-CGS624V Vergleich

Detaillierter Direktvergleich von RTAX2000SL-1CGS624B von Microchip Technology und RTAX2000SL-CGS624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000SL-1CGS624B RTAX2000SL-1CGS624B - Rad-Tolerant FPGA 2M Gates CCGA624 | Microchip

RTAX2000SL-1CGS624B - Rad-Tolerant FPGA 2M Gates CCGA624 | Microchip

RTAX2000SL-1CGS624B ✓ Aktiv
Microchip Technology
RTAX2000SL-CGS624V RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-CGS624V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000SL-1CGS624B RTAX2000SL-CGS624V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $6.500,00
Family RTAX-S/SL Radiation-Tolerant FPGA RTAX-S/SL Radiation-Tolerant FPGA
Logic Blocks (CLBs) 21504 —
Equivalent System Gates 2000000 2000000
ASIC Gates 250000 —
Process Technology 0.15 um CMOS —
Core Supply Voltage 1.5 V [DATA_NEEDED: core supply voltage]
Speed Grade -1 [DATA_NEEDED: speed grade]
Maximale Taktfrequenz 649 MHz (family max, Jotrin listing) —
Programmability One-Time Programmable (antifuse) —
Configuration Live at power-up, single-chip One-time programmable antifuse, live at power-up
Embedded Memory Embedded SRAM with built-in FIFO control logic 540 kbits with optional EDAC protection
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
Gehäuse 624-pin Ceramic Column Grid Array (CCGA / CGA-624, ceramic) CG624 ceramic package
Montageart Surface Mount —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
I/O Count [DATA_NEEDED: user I/O count] —
RoHS-Status [DATA_NEEDED: RoHS status] —
Logic Cells (CLBs) — 21504
Technology — CMOS antifuse (nonvolatile)
User I/Os (maximum) — 684
Total Ionizing Dose (TID) — 300 krad (Si) functional / 200 krad (Si) parametric
Single-Event Upset Rate — Less than 1E-10 errors per bit-day
Embedded SRAM Features — Built-in FIFO control logic
Clock Architecture — Segmentable clock structures
Routing — Chip-wide highway routing, carry logic
Application Domain — Space-flight systems
I/O Supply Voltage — [DATA_NEEDED: I/O supply voltage]
System Frequency (typical) — [DATA_NEEDED: system frequency]

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