RTAX2000SL-1CGS624B vs RTAX2000SL-CGS624V Сравнение
Подробное сравнение бок о бок RTAX2000SL-1CGS624B от Microchip Technology и RTAX2000SL-CGS624V от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
RTAX2000SL-1CGS624B - Rad-Tolerant FPGA 2M Gates CCGA624 | Microchip
RTAX2000SL-1CGS624B ✓ АктивенMicrochip Technology
RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-CGS624V ✓ АктивенСравнение характеристик
| Параметр | RTAX2000SL-1CGS624B | RTAX2000SL-CGS624V |
|---|---|---|
| Бренд | Microchip Technology | Microchip Technology |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $6.500,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | RTAX-S/SL Radiation-Tolerant FPGA |
| Logic Blocks (CLBs) | 21504 | — |
| Equivalent System Gates | 2000000 | 2000000 |
| ASIC Gates | 250000 | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Speed Grade | -1 | [DATA_NEEDED: speed grade] |
| Максимальная тактовая частота | 649 MHz (family max, Jotrin listing) | — |
| Programmability | One-Time Programmable (antifuse) | — |
| Configuration | Live at power-up, single-chip | One-time programmable antifuse, live at power-up |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits with optional EDAC protection |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Корпус | 624-pin Ceramic Column Grid Array (CCGA / CGA-624, ceramic) | CG624 ceramic package |
| Тип монтажа | Surface Mount | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| I/O Count | [DATA_NEEDED: user I/O count] | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | — |
| Logic Cells (CLBs) | — | 21504 |
| Technology | — | CMOS antifuse (nonvolatile) |
| User I/Os (maximum) | — | 684 |
| Total Ionizing Dose (TID) | — | 300 krad (Si) functional / 200 krad (Si) parametric |
| Single-Event Upset Rate | — | Less than 1E-10 errors per bit-day |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clock Architecture | — | Segmentable clock structures |
| Routing | — | Chip-wide highway routing, carry logic |
| Application Domain | — | Space-flight systems |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| System Frequency (typical) | — | [DATA_NEEDED: system frequency] |