RTAX2000SL-1LG1152V vs RTAX2000SL-LG1152V Vergleich

Detaillierter Direktvergleich von RTAX2000SL-1LG1152V von Microchip Technology und RTAX2000SL-LG1152V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000SL-1LG1152V RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V ✓ Aktiv
Microchip Technology
RTAX2000SL-LG1152V RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000SL-1LG1152V RTAX2000SL-LG1152V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,00 $2.440,00
Family RTAX-S/SL Radiation-Tolerant FPGAs RTAX-S/SL RadTolerant FPGAs
Equivalent Gate Count 2,000,000 gates —
Logic Cells 32,256 32256
Configurable Logic Blocks (CLBs) 21,504 21504
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant (space flight grade) —
Speed Grade -1 —
Gehäuse CG1152 (1152-pin ceramic column grid array) 1152-pin ceramic column grid array (CG1152)
Quality Suffix V (flight grade) —
Configuration Live at power-up, single chip (no external boot PROM) One-time programmable antifuse, live at power-up
Core Voltage [DATA_NEEDED: core voltage] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Process Technology Digital CMOS —
Montageart Surface Mount Surface Mount
User I/O [DATA_NEEDED: user I/O count] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Equivalent System Gates — 2000000 gates
Technology — Digital CMOS antifuse (nonvolatile)
User I/Os — Up to 684 (package dependent)
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Radiation Environment — Space-flight (rad-tolerant)
Derivative Family Base — Microsemi Axcelerator commercial FPGA family

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