RTAX2000SL-1LG1152V vs RTAX2000SL-LG1152V Comparaison

Comparaison détaillée côte à côte de RTAX2000SL-1LG1152V par Microchip Technology et RTAX2000SL-LG1152V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX2000SL-1LG1152V RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V ✓ Actif
Microchip Technology
RTAX2000SL-LG1152V RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V ✓ Actif

Comparaison des spécifications

Paramètre RTAX2000SL-1LG1152V RTAX2000SL-LG1152V
Marque Microchip Technology Microchip Technology
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $1,00 $2 440,00
Family RTAX-S/SL Radiation-Tolerant FPGAs RTAX-S/SL RadTolerant FPGAs
Equivalent Gate Count 2,000,000 gates —
Logic Cells 32,256 32256
Configurable Logic Blocks (CLBs) 21,504 21504
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant (space flight grade) —
Speed Grade -1 —
Boîtier CG1152 (1152-pin ceramic column grid array) 1152-pin ceramic column grid array (CG1152)
Quality Suffix V (flight grade) —
Configuration Live at power-up, single chip (no external boot PROM) One-time programmable antifuse, live at power-up
Core Voltage [DATA_NEEDED: core voltage] —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Process Technology Digital CMOS —
Type de montage Surface Mount Surface Mount
User I/O [DATA_NEEDED: user I/O count] —
Statut RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Equivalent System Gates — 2000000 gates
Technology — Digital CMOS antifuse (nonvolatile)
User I/Os — Up to 684 (package dependent)
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Radiation Environment — Space-flight (rad-tolerant)
Derivative Family Base — Microsemi Axcelerator commercial FPGA family

Fiches techniques et ressources

Parcourir tous les produits Créer un BOM Demander un devis