RTAX250S-1LG624B vs RTAX2000S-1LG624V Vergleich

Detaillierter Direktvergleich von RTAX250S-1LG624B von Microchip Technology und RTAX2000S-1LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX250S-1LG624B RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip

RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip

RTAX250S-1LG624B ✓ Aktiv
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX250S-1LG624B RTAX2000S-1LG624V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2.020,00 $0,00
Family RTAX-S Radiation-Tolerant FPGA —
Equivalent System Gates 250000 gates 2,000,000 gates
Logic Cells (Modules) 2816 cells —
Registers / Logic Cells Total 4224 logic cells —
User I/O 248 I/O —
Core Supply Voltage 1.5 V [DATA_NEEDED: core supply voltage]
Maximum System Frequency 649 MHz —
Process Technology 0.15 um CMOS Digital CMOS
Speed Grade -1 -1
Gehäuse 624-Pin LGA (LG624), ceramic CG624, 624-pin ceramic column grid array
Betriebstemperatur -55C to +125C —
Configuration Anti-fuse, live at power-up (single chip) Single-chip, live at power-up (no boot device required)
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits SRAM with optional EDAC protection
Radiation Tolerance Radiation-tolerant (RTAX-S class, per Microchip RTAX-S datasheet) —
Montageart Surface Mount Surface Mount
Program Numbering B = Military program-level screening —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL-Level [DATA_NEEDED: moisture sensitivity level] —
Configurable Logic Blocks (CLBs) — 21,504
User I/Os (maximum, family) — Up to 684
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Programming Technology — One-time programmable antifuse, nonvolatile
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature range]

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