RTAX250S-1LG624B vs RTAX2000S-1LG624V Сравнение

Подробное сравнение бок о бок RTAX250S-1LG624B от Microchip Technology и RTAX2000S-1LG624V от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Microchip Technology
RTAX250S-1LG624B RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip

RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip

RTAX250S-1LG624B ✓ Активен
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Активен

Сравнение характеристик

Параметр RTAX250S-1LG624B RTAX2000S-1LG624V
Бренд Microchip Technology Microchip Technology
Категория FPGA & CPLD FPGA & CPLD
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $2.020,00 $0,00
Family RTAX-S Radiation-Tolerant FPGA —
Equivalent System Gates 250000 gates 2,000,000 gates
Logic Cells (Modules) 2816 cells —
Registers / Logic Cells Total 4224 logic cells —
User I/O 248 I/O —
Core Supply Voltage 1.5 V [DATA_NEEDED: core supply voltage]
Maximum System Frequency 649 MHz —
Process Technology 0.15 um CMOS Digital CMOS
Speed Grade -1 -1
Корпус 624-Pin LGA (LG624), ceramic CG624, 624-pin ceramic column grid array
Рабочая температура -55C to +125C —
Configuration Anti-fuse, live at power-up (single chip) Single-chip, live at power-up (no boot device required)
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits SRAM with optional EDAC protection
Radiation Tolerance Radiation-tolerant (RTAX-S class, per Microchip RTAX-S datasheet) —
Тип монтажа Surface Mount Surface Mount
Program Numbering B = Military program-level screening —
Статус RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Уровень MSL [DATA_NEEDED: moisture sensitivity level] —
Configurable Logic Blocks (CLBs) — 21,504
User I/Os (maximum, family) — Up to 684
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Programming Technology — One-time programmable antifuse, nonvolatile
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Диапазон рабочих температур — [DATA_NEEDED: operating temperature range]

Даташиты & ресурсы

Все товары Создать BOM Запросить цену