RTAX250SL-CG624B vs RTAX2000SL-1CGS624V Vergleich
Detaillierter Direktvergleich von RTAX250SL-CG624B von Microchip Technology und RTAX2000SL-1CGS624V von Microsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX250SL-CG624B - 250K Rad-Tolerant FPGA 624-CCGA | Microchip
RTAX250SL-CG624B ✓ AktivMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX250SL-CG624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Marke | Microchip Technology | Microsemi |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3.950,00 | $0,00 |
| Family | RTAX-SL (Radiation-Tolerant FPGA) | — |
| Equivalent System Gates | 250000 gates | 2000000 |
| Logic Cells / CLBs | 2816 cells | — |
| Maximale Taktfrequenz | 649 MHz | — |
| Combinatorial Delay (CLB) | 0.930 ns max | — |
| Process Technology | 0.15 um antifuse | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Gehäuse | 624-ball CCGA (CG624) | 624-ball ceramic CGA (CGS624) |
| Montageart | Surface Mount | Surface Mount |
| Configuration Technology | Antifuse (single-chip, live at power-up) | — |
| Embedded Memory | Embedded SRAM with FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | — |
| Programmability Type | Field Programmable Gate Array (one-time programmable) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| I/O Supply Voltage | [DATA_NEEDED: I/O supply voltage] | [DATA_NEEDED: I/O supply voltage] |
| Number of User I/Os (CG624) | [DATA_NEEDED: number of user I/Os] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Speed Grade | — | -1 |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |