RTAX250SL-CG624B vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX250SL-CG624B par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250SL-CG624B - 250K Rad-Tolerant FPGA 624-CCGA | Microchip
RTAX250SL-CG624B ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250SL-CG624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 950,00 | $0,00 |
| Family | RTAX-SL (Radiation-Tolerant FPGA) | — |
| Equivalent System Gates | 250000 gates | 2000000 |
| Logic Cells / CLBs | 2816 cells | — |
| Fréquence d'horloge maximale | 649 MHz | — |
| Combinatorial Delay (CLB) | 0.930 ns max | — |
| Process Technology | 0.15 um antifuse | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Boîtier | 624-ball CCGA (CG624) | 624-ball ceramic CGA (CGS624) |
| Type de montage | Surface Mount | Surface Mount |
| Configuration Technology | Antifuse (single-chip, live at power-up) | — |
| Embedded Memory | Embedded SRAM with FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | — |
| Programmability Type | Field Programmable Gate Array (one-time programmable) | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| I/O Supply Voltage | [DATA_NEEDED: I/O supply voltage] | [DATA_NEEDED: I/O supply voltage] |
| Number of User I/Os (CG624) | [DATA_NEEDED: number of user I/Os] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Speed Grade | — | -1 |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |