RTAX250SL-CQ352V vs RTAX1000SL-CQ352V Vergleich
Detaillierter Direktvergleich von RTAX250SL-CQ352V von Microsemi und RTAX1000SL-CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX250SL-CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Marke | Microsemi | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 250000 gates | 1,000,000 |
| Logic Cells | 4224 | 18,144 |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Process Technology | CMOS | 0.15 um CMOS |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Number of Inputs | 198 | — |
| Anzahl der Ausgänge | 198 | — |
| Total Terminals | 352 | — |
| Gehäuse | CQFP-352 (CQ352) ceramic | 352-pin Ceramic CQFP (CQ352V) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Combinatorial Delay (max) | 0.93 ns | — |
| Operation | Live at power-up | — |
| Montageart | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| User I/O | [DATA_NEEDED: user I/O count] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |