RTAX250SL-CQ352V vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX250SL-CQ352V par Microsemi et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250SL-CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microsemi | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 250000 gates | 1,000,000 |
| Logic Cells | 4224 | 18,144 |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Process Technology | CMOS | 0.15 um CMOS |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Number of Inputs | 198 | — |
| Nombre de sorties | 198 | — |
| Total Terminals | 352 | — |
| Boîtier | CQFP-352 (CQ352) ceramic | 352-pin Ceramic CQFP (CQ352V) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Combinatorial Delay (max) | 0.93 ns | — |
| Operation | Live at power-up | — |
| Type de montage | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| User I/O | [DATA_NEEDED: user I/O count] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Statut RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |