SST25VF010A-33-4I-SAE-T vs SST25VF010A-33-4I-SAE Vergleich
Detaillierter Direktvergleich von SST25VF010A-33-4I-SAE-T von Microchip Technology und SST25VF010A-33-4I-SAE von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
SST25VF010A-33-4I-SAE-T - 1Mbit SPI Flash 33MHz 2.7-3.6V | Microchip
SST25VF010A-33-4I-SAE-T ✓ AktivMicrochip Technology
SST25VF010A-33-4I-SAE - 1Mbit SPI Flash 33MHz 8-SOIC | Microchip
SST25VF010A-33-4I-SAE ✓ AktivSpezifikationsvergleich
| Parameter | SST25VF010A-33-4I-SAE-T | SST25VF010A-33-4I-SAE |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,55 |
| Speichertyp | Non-volatile NOR Flash | NOR Flash |
| Speichergröße | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) |
| Schnittstelle | SPI (Mode 0 and Mode 3) | — |
| Maximale Taktfrequenz | 33 MHz (up to 80 MHz in high-speed mode per datasheet) | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Active Read Current | 10 mA (typical at 33 MHz) | — |
| Standby Current | 8 uA (typical) | — |
| Program/Erase Cycles | >= 100,000 per sector | — |
| Data Retention | >= 100 years | >100 years |
| Sector Size | 4 KB uniform sectors | 4 KB |
| Block Erase Sizes | 32 KB and 64 KB | — |
| Access Time | 12 ns | — |
| Betriebstemperaturbereich | -40C to +85C (Industrial -4I grade) | — |
| Gehäuse | 8-SOIC (SAE, 0.150") | 8-SOIC (SAE, 0.150") |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (unlimited floor life at <30C/85% RH) |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| Technology | SuperFlash split-gate cell with thick-oxide tunneling injector | — |
| Memory Organization | — | 128K x 8 |
| Schnittstellentyp | — | SPI (4-wire, Mode 0 and Mode 3) |
| Maximum SPI Clock Frequency | — | 33 MHz |
| Supply Voltage (VDD) | — | 2.7 V to 3.6 V |
| Active Read Current (typical) | — | 10 mA |
| Standby Current (typical) | — | 15 uA |
| Program/Erase Endurance | — | 100,000 cycles per sector |
| Betriebstemperatur | — | -40C to +85C (industrial) |
| Architecture | — | Sectored SuperFlash split-gate CMOS |
| Write Protection | — | Hardware WP# pin and software Status Register |
| RoHS-Status | — | Compliant |