SST25VF010A-33-4I-SAE-T vs SST25VF010A-33-4I-SAE 对比

详细并排对比 SST25VF010A-33-4I-SAE-T 出自 Microchip Technology 和 SST25VF010A-33-4I-SAE 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Microchip Technology
SST25VF010A-33-4I-SAE-T SST25VF010A-33-4I-SAE-T - 1Mbit SPI Flash 33MHz 2.7-3.6V | Microchip

SST25VF010A-33-4I-SAE-T - 1Mbit SPI Flash 33MHz 2.7-3.6V | Microchip

SST25VF010A-33-4I-SAE-T ✓ 量产中
Microchip Technology
SST25VF010A-33-4I-SAE SST25VF010A-33-4I-SAE - 1Mbit SPI Flash 33MHz 8-SOIC | Microchip

SST25VF010A-33-4I-SAE - 1Mbit SPI Flash 33MHz 8-SOIC | Microchip

SST25VF010A-33-4I-SAE ✓ 量产中

规格对比

参数 SST25VF010A-33-4I-SAE-T SST25VF010A-33-4I-SAE
品牌 Microchip Technology Microchip Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.55
存储器类型 Non-volatile NOR Flash NOR Flash
存储容量 1 Mbit (128K x 8) 1 Mbit (128K x 8)
接口 SPI (Mode 0 and Mode 3) —
最大时钟频率 33 MHz (up to 80 MHz in high-speed mode per datasheet) —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Active Read Current 10 mA (typical at 33 MHz) —
Standby Current 8 uA (typical) —
Program/Erase Cycles >= 100,000 per sector —
Data Retention >= 100 years >100 years
Sector Size 4 KB uniform sectors 4 KB
Block Erase Sizes 32 KB and 64 KB —
Access Time 12 ns —
工作温度范围 -40C to +85C (Industrial -4I grade) —
封装 8-SOIC (SAE, 0.150") 8-SOIC (SAE, 0.150")
安装类型 Surface Mount Surface Mount
MSL 等级 1 1 (unlimited floor life at <30C/85% RH)
Lead-Free / RoHS Lead-Free / RoHS Compliant —
Technology SuperFlash split-gate cell with thick-oxide tunneling injector —
Memory Organization — 128K x 8
接口类型 — SPI (4-wire, Mode 0 and Mode 3)
Maximum SPI Clock Frequency — 33 MHz
Supply Voltage (VDD) — 2.7 V to 3.6 V
Active Read Current (typical) — 10 mA
Standby Current (typical) — 15 uA
Program/Erase Endurance — 100,000 cycles per sector
工作温度 — -40C to +85C (industrial)
Architecture — Sectored SuperFlash split-gate CMOS
Write Protection — Hardware WP# pin and software Status Register
RoHS 状态 — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价