TLE75080ESHXUMA1 vs TLE75080ESDXUMA1 Vergleich

Detaillierter Direktvergleich von TLE75080ESHXUMA1 von Infineon und TLE75080ESDXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter TLE75080ESHXUMA1 TLE75080ESDXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,05 $2,55
Funktion 8-channel high-side power switch with 16-bit SPI —
Number of Channels 8 8
Channel Current (continuous) 330 mA per channel —
Topologie High-side, N-channel MOSFET with charge pump —
Schnittstelle 16-bit SPI, plus parallel input —
PWM Capability Integrated PWM generators per channel —
Nominal Supply Voltage (VBAT) 12 V (automotive) —
Operating Voltage Range [DATA_NEEDED: VS/VBAT range] —
Limp Home Mode Yes (predefined safe pattern on SPI loss) —
Per-channel Diagnostics Open load, short to GND, short to VBAT, overtemperature —
Fault Behavior Selectable latching or auto-restart —
Gehäuse PG-TSDSO-24-21 (TSDSO-24, exposed thermal pad) PG-TSDSO-24-21 (exposed pad)
Montageart Surface Mount Surface Mount
Betriebstemperatur -40 C to +150 C (junction, AEC-Q100) —
Automotive Qualification AEC-Q100 —
RoHS-Status Compliant Compliant
Technology Family Infineon SPIDER (Smart Power) —
Channel Configuration — High-side, N-channel MOSFET
Per-Channel Output Current — 330 mA
Supply Voltage Range — 4.5 V to 28 V
Load Dump Tolerance — 40 V
Cranking Voltage (Limp Home) — 3.0 V
On-State Resistance (typ per channel) — 1.5 ohm
Communication Interface — 16-bit SPI (daisy-chain capable)
Diagnostic Features — Open-load detect (on/off), overcurrent, overtemperature, short to battery/GND
Protection Functions — Reverse battery, load dump, thermal shutdown, current limit
Betriebstemperaturbereich — -40 C to +150 C
MSL-Level — 2A

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