TPD1E01B04DPYR vs TPD1E10B06DPYR Vergleich

Detaillierter Direktvergleich von TPD1E01B04DPYR von Texas Instruments und TPD1E10B06DPYR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
TPD1E01B04DPYR TPD1E01B04DPYR - 0.18pF ESD Diode USB Type-C | Texas Instruments

TPD1E01B04DPYR - 0.18pF ESD Diode USB Type-C | Texas Instruments

TPD1E01B04DPYR ✓ Aktiv
Texas Instruments
TPD1E10B06DPYR TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR ✓ Aktiv

Spezifikationsvergleich

Parameter TPD1E01B04DPYR TPD1E10B06DPYR
Marke Texas Instruments Texas Instruments
Kategorie Surge Protectors Surge Protectors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,02 $0,15
Product Type 1-Channel Bidirectional TVS ESD Protection Diode —
IO Capacitance (Typ) 0.18 pF (0.18 to 0.20 pF) —
Reverse Standoff Voltage 3.6 V —
ESD Rating ±15 kV (IEC 61000-4-2 Level 4) —
Clamping Voltage 15 V —
Peak Pulse Current (Ipp) 2.5 A (8/20 us) 5 A (8/20 µs)
Polarity Bidirectional Bidirectional (back-to-back TVS)
Target Interface Speed Up to 20 Gbps —
Target Applications USB Type-C, Thunderbolt 3 —
Gehäuse 2-X1SON (DPY, 0402/DFN1006 footprint) X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm
Montageart Surface Mount Surface Mount
Number of Channels 1 —
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40 °C to +125 °C
Dynamic Resistance (R_DYN) Low (per TI datasheet, [DATA_NEEDED: exact value]) —
Breakdown Voltage [DATA_NEEDED: breakdown voltage] —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
Power Line Protection No (signal line ESD protection) —
Device Type — Single-channel ESD protection TVS diode
Working Voltage (Vrwm) — 5 V (typical); 14 V clamp at 5 A Ipp
DC Breakdown Voltage — ±6 V (minimum)
ESD Contact Discharge — ±30 kV (IEC 61000-4-2)
ESD Air-Gap Discharge — ±30 kV (IEC 61000-4-2)
Line Capacitance — 12 pF (typical)
IO Capacitance — 10 pF (typical)
Dynamic Resistance (R_DYNAMIC) — 0.37 Ω
Leakage Current — Ultra-low (nA range per datasheet)
ESD Standard — IEC 61000-4-2 Level 4 (Air & Contact)
MSL-Level — Level 3 (per PartGenie summary)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern