TPD1E01B04DPYR vs TPD1E10B06DPYR Comparação
Comparação detalhada lado a lado de TPD1E01B04DPYR por Texas Instruments e TPD1E10B06DPYR por Texas Instruments. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Texas Instruments
TPD1E01B04DPYR - 0.18pF ESD Diode USB Type-C | Texas Instruments
TPD1E01B04DPYR ✓ Ativo
Comparação de especificações
| Parâmetro | TPD1E01B04DPYR | TPD1E10B06DPYR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoria | Surge Protectors | Surge Protectors |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,02 | $0,15 |
| Product Type | 1-Channel Bidirectional TVS ESD Protection Diode | — |
| IO Capacitance (Typ) | 0.18 pF (0.18 to 0.20 pF) | — |
| Reverse Standoff Voltage | 3.6 V | — |
| ESD Rating | ±15 kV (IEC 61000-4-2 Level 4) | — |
| Clamping Voltage | 15 V | — |
| Peak Pulse Current (Ipp) | 2.5 A (8/20 us) | 5 A (8/20 µs) |
| Polarity | Bidirectional | Bidirectional (back-to-back TVS) |
| Target Interface Speed | Up to 20 Gbps | — |
| Target Applications | USB Type-C, Thunderbolt 3 | — |
| Encapsulamento | 2-X1SON (DPY, 0402/DFN1006 footprint) | X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm |
| Tipo de montagem | Surface Mount | Surface Mount |
| Number of Channels | 1 | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | -40 °C to +125 °C |
| Dynamic Resistance (R_DYN) | Low (per TI datasheet, [DATA_NEEDED: exact value]) | — |
| Breakdown Voltage | [DATA_NEEDED: breakdown voltage] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Power Line Protection | No (signal line ESD protection) | — |
| Device Type | — | Single-channel ESD protection TVS diode |
| Working Voltage (Vrwm) | — | 5 V (typical); 14 V clamp at 5 A Ipp |
| DC Breakdown Voltage | — | ±6 V (minimum) |
| ESD Contact Discharge | — | ±30 kV (IEC 61000-4-2) |
| ESD Air-Gap Discharge | — | ±30 kV (IEC 61000-4-2) |
| Line Capacitance | — | 12 pF (typical) |
| IO Capacitance | — | 10 pF (typical) |
| Dynamic Resistance (R_DYNAMIC) | — | 0.37 Ω |
| Leakage Current | — | Ultra-low (nA range per datasheet) |
| ESD Standard | — | IEC 61000-4-2 Level 4 (Air & Contact) |
| Nível MSL | — | Level 3 (per PartGenie summary) |