TPS4H000BQPWPRQ1 vs BTS5215LAUMA1 Vergleich

Detaillierter Direktvergleich von TPS4H000BQPWPRQ1 von Texas Instruments und BTS5215LAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
TPS4H000BQPWPRQ1 TPS4H000BQPWPRQ1 - 40V 4-Ch Smart High-Side Switch | TI

TPS4H000BQPWPRQ1 - 40V 4-Ch Smart High-Side Switch | TI

TPS4H000BQPWPRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter TPS4H000BQPWPRQ1 BTS5215LAUMA1
Marke Texas Instruments Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,15 $1,18
Product Type Quad-channel smart high-side switch Smart High-Side Power Switch
Number of Channels 4 2
Supply Voltage Range 3.4 V to 40 V —
On-Resistance (per channel) 1000 mOhm (typical) —
Rated Output Current (per channel) 750 mA —
Strombegrenzung External, adjustable —
Current Sense High-accuracy, multiplexed via CS pin —
Diagnostics Open-load, short-circuit, thermal, full fault reporting —
Control Inputs IN1, IN2, IN3, IN4, SEL —
Qualification AEC-Q100 qualified (automotive) —
Gehäuse 20-pin HTSSOP (PWP) with exposed pad PG-DSO-12-9
Montageart Surface Mount —
Power FET Type Integrated NMOS with internal charge pump —
Target Rails 12-V and 24-V automotive/industrial —
Protection Overload, thermal shutdown, output clamp —
RoHS-Status Compliant Compliant
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Standby Current — Very low (datasheet value [DATA_NEEDED: standby current uA])
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Status feedback per channel
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Protection Features — Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
Demagnetization — Fast demagnetization of inductive loads
Betriebstemperatur — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]

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