TSHA4401-AS12Z vs TSHA4401 Vergleich
Detaillierter Direktvergleich von TSHA4401-AS12Z von Vishay Intertechnology und TSHA4401 von Vishay Intertechnology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Vishay Intertechnology
TSHA4401-AS12Z - 875nm GaAlAs IR Emitter, 3mm T-1 | Vishay
TSHA4401-AS12Z ✓ AktivSpezifikationsvergleich
| Parameter | TSHA4401-AS12Z | TSHA4401 |
|---|---|---|
| Marke | Vishay Intertechnology | Vishay Intertechnology |
| Kategorie | IR Emitters & Receivers | IR Emitters & Receivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,72 |
| Peak Wavelength | 875 nm | 875 nm |
| Spectral Bandwidth | [DATA_NEEDED: spectral bandwidth] | 80 nm |
| Forward Voltage (Vf) | 1.5 V typical at 100 mA | — |
| DC Forward Current (If) | 100 mA maximum | — |
| Peak Forward Current (pulsed) | [DATA_NEEDED: pulsed peak forward current] | — |
| Radiant Intensity (Ie) | 16 mW/sr typical at 100 mA | — |
| Total Radiant Power (Φe) | [DATA_NEEDED: total radiant power] | — |
| Half-Power Viewing Angle | ±20° (40° total) | — |
| Rise Time / Fall Time | [DATA_NEEDED: switching time] | — |
| Reverse Voltage (Vr) | [DATA_NEEDED: maximum reverse voltage] | — |
| Betriebstemperaturbereich | -40 °C to +85 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature] | — |
| Gehäuse / Bauform | Radial, 3 mm (T-1) tinted diffused | — |
| Lead Form / Packaging | AS12Z - formed leads, tape & reel | — |
| Montageart | Through-Hole | Through-Hole (Radial) |
| JEDEC Package Outline | [DATA_NEEDED: JEDEC outline] | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | Compliant (per part suffix -e2) | Compliant |
| Forward Voltage (Typ) | — | 1.5 V at 100 mA |
| Forward Voltage (Max) | — | 3.2 V |
| Reverse Voltage (Max) | — | 5 V |
| Continuous Forward Current (Max) | — | 100 mA |
| Reverse Current (Max) | — | 100 nA at 5 V |
| Power Dissipation (Max) | — | 180 mW |
| Radiant Intensity (Typ) | — | 16 mW/sr at 100 mA |
| Viewing Angle | — | 40 degrees |
| Rise Time (Typ) | — | 600 ns |
| Fall Time (Typ) | — | 600 ns |
| Betriebstemperatur | — | -40C to +85C |
| Gehäuse | — | T-1 (3 mm), through-hole radial |
| Lens Type | — | Clear, untinted epoxy |
| Technology | — | GaAlAs on GaAlAs heterojunction |