TSHA4401-AS12Z vs TSHA4401 Сравнение
Подробное сравнение бок о бок TSHA4401-AS12Z от Vishay Intertechnology и TSHA4401 от Vishay Intertechnology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Vishay Intertechnology
TSHA4401-AS12Z - 875nm GaAlAs IR Emitter, 3mm T-1 | Vishay
TSHA4401-AS12Z ✓ АктивенСравнение характеристик
| Параметр | TSHA4401-AS12Z | TSHA4401 |
|---|---|---|
| Бренд | Vishay Intertechnology | Vishay Intertechnology |
| Категория | IR Emitters & Receivers | IR Emitters & Receivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,52 | $0,72 |
| Peak Wavelength | 875 nm | 875 nm |
| Spectral Bandwidth | [DATA_NEEDED: spectral bandwidth] | 80 nm |
| Forward Voltage (Vf) | 1.5 V typical at 100 mA | — |
| DC Forward Current (If) | 100 mA maximum | — |
| Peak Forward Current (pulsed) | [DATA_NEEDED: pulsed peak forward current] | — |
| Radiant Intensity (Ie) | 16 mW/sr typical at 100 mA | — |
| Total Radiant Power (Φe) | [DATA_NEEDED: total radiant power] | — |
| Half-Power Viewing Angle | ±20° (40° total) | — |
| Rise Time / Fall Time | [DATA_NEEDED: switching time] | — |
| Reverse Voltage (Vr) | [DATA_NEEDED: maximum reverse voltage] | — |
| Диапазон рабочих температур | -40 °C to +85 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature] | — |
| Корпус / Типоразмер | Radial, 3 mm (T-1) tinted diffused | — |
| Lead Form / Packaging | AS12Z - formed leads, tape & reel | — |
| Тип монтажа | Through-Hole | Through-Hole (Radial) |
| JEDEC Package Outline | [DATA_NEEDED: JEDEC outline] | — |
| Уровень MSL | [DATA_NEEDED: MSL level] | — |
| Статус RoHS | Compliant (per part suffix -e2) | Compliant |
| Forward Voltage (Typ) | — | 1.5 V at 100 mA |
| Forward Voltage (Max) | — | 3.2 V |
| Reverse Voltage (Max) | — | 5 V |
| Continuous Forward Current (Max) | — | 100 mA |
| Reverse Current (Max) | — | 100 nA at 5 V |
| Power Dissipation (Max) | — | 180 mW |
| Radiant Intensity (Typ) | — | 16 mW/sr at 100 mA |
| Viewing Angle | — | 40 degrees |
| Rise Time (Typ) | — | 600 ns |
| Fall Time (Typ) | — | 600 ns |
| Рабочая температура | — | -40C to +85C |
| Корпус | — | T-1 (3 mm), through-hole radial |
| Lens Type | — | Clear, untinted epoxy |
| Technology | — | GaAlAs on GaAlAs heterojunction |