UCC21521Q-Q1 vs UCC21550Q-Q1 Vergleich

Detaillierter Direktvergleich von UCC21521Q-Q1 von Texas Instruments und UCC21550Q-Q1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550Q-Q1 UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21521Q-Q1 UCC21550Q-Q1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,00 $2,10
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Rating 5700 Vrms 5000 Vrms (reinforced)
Kanäle 2 (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Enable-Pin Yes —
UVLO Yes, on input and output supplies —
AEC-Q100 Qualified (automotive grade Q1) —
Betriebstemperatur -40C to +125C -40C to +150C
Gehäuse 16-SOIC (DW) 16-SOIC (DW)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Common-Mode Transient Immunity [DATA_NEEDED: CMTI value in kV/us or V/ns] —
Propagation Delay [DATA_NEEDED: typical propagation delay] —
Supply Voltage Range (Input/Output) [DATA_NEEDED: VDD/VCCI range] —
MSL-Level [DATA_NEEDED: MSL rating] —
Lebenszyklusstatus Active —
Product Type — Reinforced isolated dual-channel gate driver
Number of Channels — 2
Isolation Technology — Capacitive coupling
Configurations — Dual low-side, dual high-side, or half-bridge
Programmable Dead Time — Yes (single resistor)
Target Transistors — Power MOSFET, SiC, GaN, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
Disable Function — Yes
Versorgungsspannung — [DATA_NEEDED: VDD range]

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