UCC21540QDWKRQ1 vs UCC21550Q-Q1 Vergleich

Detaillierter Direktvergleich von UCC21540QDWKRQ1 von Texas Instruments und UCC21550Q-Q1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550Q-Q1 UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21540QDWKRQ1 UCC21550Q-Q1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $2,10
Number of Channels 2 2
Isolation Type Reinforced, capacitive coupling —
Isolation Voltage 5700 VRMS —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Channel-to-Channel Spacing 3.3 mm minimum (DWK package) —
Dead Time Programmable (external resistor) —
Target Transistors Power MOSFET, IGBT, GaN Power MOSFET, SiC, GaN, IGBT
Configuration Options Dual low-side, dual high-side, or half-bridge —
UVLO 8 V (secondary side) —
Automotive Qualification AEC-Q100 AEC-Q100 qualified (Q1)
Gehäuse 14-SOIC (DWK) 16-SOIC (DW)
Montageart Surface Mount Surface Mount
Betriebstemperatur Wide temperature range (automotive) -40C to +150C
RoHS-Status Compliant Compliant
Product Type — Reinforced isolated dual-channel gate driver
Isolation Rating — 5000 Vrms (reinforced)
Isolation Technology — Capacitive coupling
Configurations — Dual low-side, dual high-side, or half-bridge
Programmable Dead Time — Yes (single resistor)
Disable Function — Yes
Versorgungsspannung — [DATA_NEEDED: VDD range]

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