UCC5320 vs UCC5390ECD Vergleich

Detaillierter Direktvergleich von UCC5320 von Texas Instruments und UCC5390ECD von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC5320 UCC5320 - 4.3A Isolated Gate Driver | Texas Instruments

UCC5320 - 4.3A Isolated Gate Driver | Texas Instruments

UCC5320 ✓ Aktiv
Texas Instruments
UCC5390ECD UCC5390ECD - 10A Isolated Gate Driver, 3kVrms, 8-SOIC | TI

UCC5390ECD - 10A Isolated Gate Driver, 3kVrms, 8-SOIC | TI

UCC5390ECD ✓ Aktiv

Spezifikationsvergleich

Parameter UCC5320 UCC5390ECD
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,85 $1,12
Number of Channels 1 1
Peak Source Current 4.3 A —
Peak Sink Current 4.5 A —
Isolation Voltage (D package) 3000 Vrms (basic) —
Isolation Voltage (DWV package) 5000 Vrms (reinforced) —
Primary Supply Voltage (VDD1) 3 V to 5.5 V —
Secondary Supply Voltage (VDD2) 9.5 V to 33 V —
Ausgangskonfiguration Split output (UCC5320S) or single (UCC5320E) Single output, split OUTH/OUTL not present in -E variant
UVLO Reference VDD2 referenced (E variant) or GND2 referenced (EC variant) —
Propagation Delay [DATA_NEEDED: propagation delay ns] [DATA_NEEDED: propagation delay ns]
Common-Mode Transient Immunity (CMTI) >= 100 kV/us >=100 kV/us (minimum)
Betriebstemperaturbereich -40C to +125C (junction to +150C) -40C to +125C
Package Options 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV) —
Supported Switch Types MOSFET, IGBT, SiC MOSFET, GaN FET —
Montageart Surface Mount —
RoHS-Status Compliant Compliant
Isolation Voltage Rating — 3 kVrms (basic)
Output Peak Source Current — 10 A
Output Peak Sink Current — 10 A
UVLO Threshold (VCC2) — 12 V
Input Logic — TTL/CMOS compatible
Output Supply Voltage (VCC2) — [DATA_NEEDED: VCC2 min/max V]
Input Supply Voltage (VCC1) — [DATA_NEEDED: VCC1 min/max V]
Gehäuse — SOIC-8 (D)
Isolation Technology — Capacitive (basic isolation)
Approximate Body Size — 3.91 mm x 4.90 mm (SOIC-8 D)
MSL-Level — [DATA_NEEDED: MSL level]
AEC-Q100 Qualified — No (industrial grade)

Datenblätter & Ressourcen

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