UCC5320 vs UCC5390ECD Comparaison
Comparaison détaillée côte à côte de UCC5320 par Texas Instruments et UCC5390ECD par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | UCC5320 | UCC5390ECD |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,85 | $1,12 |
| Number of Channels | 1 | 1 |
| Peak Source Current | 4.3 A | — |
| Peak Sink Current | 4.5 A | — |
| Isolation Voltage (D package) | 3000 Vrms (basic) | — |
| Isolation Voltage (DWV package) | 5000 Vrms (reinforced) | — |
| Primary Supply Voltage (VDD1) | 3 V to 5.5 V | — |
| Secondary Supply Voltage (VDD2) | 9.5 V to 33 V | — |
| Configuration de sortie | Split output (UCC5320S) or single (UCC5320E) | Single output, split OUTH/OUTL not present in -E variant |
| UVLO Reference | VDD2 referenced (E variant) or GND2 referenced (EC variant) | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | [DATA_NEEDED: propagation delay ns] |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us | >=100 kV/us (minimum) |
| Plage de température de fonctionnement | -40C to +125C (junction to +150C) | -40C to +125C |
| Package Options | 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV) | — |
| Supported Switch Types | MOSFET, IGBT, SiC MOSFET, GaN FET | — |
| Type de montage | Surface Mount | — |
| Statut RoHS | Compliant | Compliant |
| Isolation Voltage Rating | — | 3 kVrms (basic) |
| Output Peak Source Current | — | 10 A |
| Output Peak Sink Current | — | 10 A |
| UVLO Threshold (VCC2) | — | 12 V |
| Input Logic | — | TTL/CMOS compatible |
| Output Supply Voltage (VCC2) | — | [DATA_NEEDED: VCC2 min/max V] |
| Input Supply Voltage (VCC1) | — | [DATA_NEEDED: VCC1 min/max V] |
| Boîtier | — | SOIC-8 (D) |
| Isolation Technology | — | Capacitive (basic isolation) |
| Approximate Body Size | — | 3.91 mm x 4.90 mm (SOIC-8 D) |
| Niveau MSL | — | [DATA_NEEDED: MSL level] |
| AEC-Q100 Qualified | — | No (industrial grade) |