VNQ660SP vs VNQ660SP-E Vergleich

Detaillierter Direktvergleich von VNQ660SP von STMicroelectronics und VNQ660SP-E von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter VNQ660SP VNQ660SP-E
Marke STMicroelectronics STMicroelectronics
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,45 $1,45
Part Number VNQ660SP —
Manufacturer STMicroelectronics —
Technology VIPower M0-3 STMicroelectronics VIPower M0-3
Funktion Quad Channel High-Side Solid State Relay —
Number of Channels 4 4 (Quad)
Ausgangskonfiguration High-Side (N-Channel MOSFET) —
On-Resistance RDS(on) per Channel 50 mΩ (typical) —
Continuous Output Current per Channel 6 A —
Supply Voltage VCC 10 V to 36 V —
Input Compatibility CMOS-compatible logic inputs —
Open-Load Detection Yes (off-state) —
Undervoltage Shutdown Yes Yes
Overvoltage Shutdown Yes —
Overvoltage Clamp Yes (active avalanche) —
Thermisches Abschalten Yes Yes
Current Limitation Yes Yes
Gehäuse PowerSO-10 (10-pin with exposed pad) PowerSO-10 (Exposed Bottom Pad)
Montageart Surface Mount Surface Mount
Topologie — High-Side Switch (Solid State Relay)
Supply Voltage (Vcc) — 6 V to 36 V
On-State Resistance (RDS(on)) — 40 mOhm per channel (typical)
Output Current per Channel — 6 A continuous
Output Current (Peak) — [DATA_NEEDED: peak current per channel]
Input Type — CMOS-compatible logic inputs
Off-State Open-Load Detection — Yes
Overvoltage Shutdown / Clamp — Yes
Betriebstemperatur — [DATA_NEEDED: operating temperature range]
RoHS-Status — Compliant
Einschaltverzögerungszeit — 40 us (typ)

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