1N6E6327XTSA1 - LTE Low-Noise Amplifier MMIC | Infineon
Teilenummer: 1N6E6327XTSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.48 | $48,00 |
| 500 | $0.43 | $215,00 |
| 1.000 | $0.39 | $390,00 |
| 3.000 | $0.35 | $1.050,00 |
1N6E6327XTSA1 Übersicht
An LTE Low Noise Amplifier (LNA) is a radio-frequency front-end IC placed immediately after the antenna (or after the duplexer in FDD systems) that amplifies the weak cellular downlink signal while adding as little noise as possible; the LNA is the dominant contributor to the receiver's overall noise figure, so its noise figure and gain directly determine uplink-budget sensitivity and end-user throughput. As a member of the Infineon BGA7x LNA family, the 1N6E6327XTSA1 belongs to the SiGe MMIC subclass of radio-frequency amplifiers - itself part of the broader RF front-end IC hierarchy that includes front-end modules (FEMs), power amplifiers, antenna tuners, and switches in modern smartphones and small-cell base stations.
Key features include a 12.5 dB typical power gain, a 0.65 dB noise figure at 2.6 GHz, an output P1dB of -8 dBm, integrated matching to 50 ohms on both RF ports, an integrated active bias that stabilises performance across the 1.5 V-3.3 V supply range, and ESD protection on the antenna port. The MMIC requires only a few external bypass capacitors, eliminating the need for bulky transmission-line matching networks on the host PCB.
The SiGe:C heterojunction bipolar transistor (HBT) process used in this family delivers repeatable gain, IP3 linearity, and noise performance far more consistent than discrete RF BJT or pHEMT solutions. By integrating the matching network inside the die, Infineon eliminates PCB layout parasitics that typically shift the match away from the intended band centre, simplifying both design-in and high-volume manufacturing.
Typical applications include smartphone RF front-ends for LTE Band 38 (TDD 2.6 GHz), Band 40 (TDD 2.3 GHz), and Band 41 (TDD 2.5 GHz); LTE small-cell and femtocell receivers; cellular IoT and 5G NR n38/n40/n41 user-equipment repeaters; and wireless infrastructure test equipment. The integrated 50 ohm ports suit both conventional microstrip layouts and chip-on-board module designs.
When laying out, place the LNA as close as practical to the antenna or duplexer output to minimise trace loss, and keep the RF traces 50 ohm controlled-impedance. Use wide ground-plane stitching vias around the PG-TSNP-6 footprint to keep the integrated bias network stable; the chip's internal decoupling requires at least one 1 nF and one 10 nF bypass capacitor within 2 mm of the supply pin.
This page synthesises distributor inventory, parametric drop-in alternatives across the BGA7 family and competing LNAs, and practical PCB-layout guidance that complement, but do not replace, the manufacturer datasheet.
Drop-in-Alternativen für 1N6E6327XTSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BGA7H2N6E6327XTSA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BGA7H3N6E6327XTSA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BGA7H1N6E6327XUSA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BGA7H1N6E6327XTSA2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BGA7H1BN6E6327XTSA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
1N6E6327XTSA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer Part Number | BGA7H1N6E6327XTSA1 |
| Funktion | Low Noise Amplifier (LNA) MMIC |
| Technology | SiGe:C HBT MMIC |
| Frequency Range | 2.3 GHz to 2.69 GHz |
| Typical Gain | 12.5 dB |
| Noise Figure | 0.65 dB (typical) |
| Output P1dB | -8 dBm |
| Supply Voltage Range | 1.5 V to 3.3 V |
| Input / Output Impedance | 50 ohm (integrated match) |
| Gehäuse | PG-TSNP-6-2 (6-lead) |
| Montageart | Surface Mount |
| Betriebstemperatur | -40 C to +85 C |
| ESD Protection | Yes (on RF input) |
| Packaging | Tape & Reel |
| Target Bands | LTE Band 38, 40, 41 / 5G NR n38, n40, n41 |
1N6E6327XTSA1 Pin-Konfiguration
| Pin 1 | RF_IN — RF input, internally matched to 50 ohm (antenna side) |
| Pin 2 | GND — DC and RF ground (slug) |
| Pin 3 | RF_OUT — RF output, internally matched to 50 ohm (transceiver side) |
| Pin 4 | GND — DC and RF ground (slug) |
| Pin 5 | VCC — Supply voltage input 1.5V-3.3V |
| Pin 6 | GND — DC and RF ground (slug) |
Typische Anwendungen
1N6E6327XTSA1 ist geeignet für 6 Anwendungs: Smartphone LTE TDD Front-End (Bands 38/40/41), 5G NR n38/n40/n41 User Equipment and Hotspots, Small-Cell and Femtocell Receivers, Cellular IoT and Industrial LTE Gateways, TDD-LTE / 5G NR Repeaters and Indoor Coverage, Wireless Test Equipment and RF Instrumentation.
Smartphone LTE TDD Front-End (Bands 38/40/41)
The Infineon 1N6E6327XTSA1 is purpose-built for the TDD LTE bands 38 (2.57-2.62 GHz), 40 (2.30-2.40 GHz), and 41 (2.50-2.69 GHz) found in Asian and converged 4G/5G markets, and the equivalent 5G NR n38/n40/n41. Its 12.5 dB gain and 0.65 dB noise figure, combined with an internal 50 ohm match on both RF pins, let designers place it directly after the antenna switch or duplexer output with only DC bypass capacitors, cutting the BOM and keeping track losses to a minimum in the tight sub-board area of a smartphone. The 1.5-3.3 V supply aligns with the phone's main 1.8 V / 3.0 V rails, so no extra LDO is needed. The PG-TSNP-6-2 footprint is shared with the rest of the BGA7x family, simplifying multi-band variants. Use this LNA when the priority is maximum downlink sensitivity for higher-order QAM streams.
Empfohlen
5G NR n38/n40/n41 User Equipment and Hotspots
In customer-premises equipment such as 5G NR hotspots, fixed-wireless-access terminals, and laptop connectivity modules, the 1N6E6327XTSA1 supplies the front-end LNA gain for n38, n40, and n41 - the three primary TDD allocations that 5G NR inherits from LTE TDD. The 0.65 dB NF improves the receiver floor enough to sustain 64-QAM and 256-QAM at the cell edge, while the integrated active-bias regulator runs from the same 1.8 V or 3.3 V rail that powers the host modem. Designers value the chip's ESD protection on the antenna input, which reduces warranty returns when an external antenna is user-replaceable. Place the LNA within 5 mm of the antenna or diplexer output to preserve the noise-figure advantage.
Empfohlen
Small-Cell and Femtocell Receivers
The 1N6E6327XTSA1 fits small-cell pico/femtocell receivers that pull downlink signals from Band 38/40/41 TDD LTE or 5G NR, with cascaded NF and gain set by the diplexer, this LNA, and the transceiver. The 12.5 dB gain overcomes 1-3 dB of upstream filtering and PCB trace loss, while the 0.65 dB NF keeps the uplink-budget noise floor within 3GPP receiver-reference requirements. The PG-TSNP-6-2 package dissipates only ~30 mW, so no thermal relief is required at the typical 20-40 mA supply current. Combining two LNAs around a small MIMO array (2T2R or 4T4R) is straightforward because the unit-to-unit gain match is tightly specified.
Empfohlen
Cellular IoT and Industrial LTE Gateways
In cellular IoT routers, industrial gateways, and energy-management telemetry devices that use LTE Band 38/40/41 to back-haul data, the 1N6E6327XTSA1 delivers reliable coverage in factories and metering cabinets where signal strength is marginal. The wide 1.5-3.3 V supply range allows direct connection to battery or PoE-derived rails without auxiliary regulators, and the active internal bias minimises bias-network PCB area. Industrial customers benefit from the -40 to +85 C operating range and the integrated RF ESD protection that shields the LNA from static encountered in field-installed external antennas. The PG-TSNP-6-2 footprint fits the 5 mm x 5 mm reference layout used across the BGA7x family.
Empfohlen
TDD-LTE / 5G NR Repeaters and Indoor Coverage
Bidirectional TDD repeaters and indoor-distribution donor antennas use the 1N6E6327XTSA1 to amplify the weak downlink signal picked up from an exterior or rooftop donor cell. Its 0.65 dB NF meaningfully reduces the figure of the overall cascade when stacked with the filter and the digital front-end, and the 12.5 dB gain gives the designer headroom to tolerate 3-5 dB of feed-line and splitter losses in large venues. The integrated 50 ohm match allows co-layout with SAW filters on conventional FR-4 substrates, and the ESD robustness on the antenna side avoids field failures when exterior antennas are lightning-exposed. Plan gain budgets assuming -8 dBm P1dB to avoid saturating from strong nearby cells.
Empfohlen
Wireless Test Equipment and RF Instrumentation
Bench-top signal generators, channel emulators, and over-the-air (OTA) test chambers often include a low-noise booster stage ahead of the analyser. The 1N6E6327XTSA1 gives 12.5 dB of clean gain with 0.65 dB NF from 2.3 to 2.69 GHz, making it ideal for boosting reference signals in LTE/5G TDD conformance testing. Its 50 ohm source match means it can be inserted directly into a standard instrumentation chain without re-matching networks, and the internal bias regulator removes a common source of temperature drift in lab-grade hardware. The chip's -8 dBm P1dB is sufficient for typical swept-signal and CW stimulus levels below 0 dBm.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 1N6E6327XTSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BGA7H2N6E6327XTSA1 | BGA7H3N6E6327XTSA1 | BGA7H1BN6E6327XTSA1 |
|---|---|---|---|---|
| Package | PG-TSNP-6-2 | PG-TSNP-6-2 - same | PG-TSNP-6-2 - same | PG-TSNP-6-2 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Frequency Range | 2.3 GHz to 2.69 GHz | 2.3 GHz to 2.69 GHz | 2.3 GHz to 2.69 GHz | 2.3 GHz to 2.69 GHz |
| Typical Gain | 12.5 dB | 13 dB | 12 dB | 12.5 dB |
| Noise Figure | 0.65 dB | 0.7 dB | 0.7 dB | 0.65 dB |
| Output P1dB | -8 dBm | -7 dBm | -9 dBm | -8 dBm |
| Supply Voltage | 1.5 V to 3.3 V | 1.5 V to 3.3 V | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
Wichtigste Unterscheidungsmerkmale
- Sub-1 dB noise figure in a fully-matched PG-TSNP-6-2 footprint (vs. BGA7H2N6E6327XTSA1)
- Highest gain in the BGA7H production grade (vs. BGA7H3N6E6327XTSA1)
- Best linearity (P1dB) in the BGA7H grade (vs. BGA7H3N6E6327XTSA1)
Designhinweise
Place the 1N6E6327XTSA1 within 2 mm of the antenna or duplexer output to preserve the 0.65 dB noise figure - every 0.5 dB of trace loss adds 0.5 dB to the NF. Keep the RF input and output traces 50 ohm controlled-impedance microstrip or coplanar-waveguide, with continuous reference ground beneath. Stitch the PG-TSNP-6-2 ground slugs to the layer-2 ground plane with multiple vias on each side to suppress parasitic lead inductance in the bias network.
Bypass the VCC pin with both a 1 nF and a 10 nF ceramic capacitor placed within 2 mm of the package to keep the internal active-bias network stable from 0.1 MHz to 6 GHz. Sharing the LNA supply with the upstream antenna switch is acceptable, but use a ferrite bead or series resistor (~3-5 ohm) if a noisy PA or DC-DC converter sits on the same rail. The internal active bias keeps the quiescent point stable over the full 1.5-3.3 V range, eliminating external bias resistors.
Do not apply DC to the RF output or feed DC into the RF input - the 50 ohm match is AC-coupled only and a DC input can saturate the front transistor. RF chain P1dB is -8 dBm; if a co-located transmitter or test source can exceed -5 dBm at the LNA input, insert a PIN limiter or step attenuator upstream. Avoid kinking the supply trace next to the 2.6 GHz path - harmonic content from a noisy DC-DC can raise the LNA's effective NF by 0.3 dB through PSRR-limited supply modulation.
For chip-on-board FEM-style assemblies, the PG-TSNP-6-2 lands can attach directly to a 4-layer FR-4 substrate with the top RF trace designed for 50 ohm using a 0.6 mm-wide microstrip over a 0.4 mm dielectric (typical). Keep the layer-1 ground fill at least three substrate thicknesses away from the RF traces to suppress parallel-plate modes. Provide a thermal copper pour directly under the slug - the LNA dissipates only ~30 mW but the copper also lowers ground-impedance return paths.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page; lead-free PG-TSNP-6-2 packaging; halogen-free per Infineon declarations.
