ADPA1112 - 1-22GHz 15W GaN PA | Analog Devices
Teilenummer: ADPA1112 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $832.68 | $832,68 |
| 10 | $780 | $7.800,00 |
| 100 | $720 | $72.000,00 |
| 500 | $680 | $340.000,00 |
| 1.000 | $650 | $650.000,00 |
ADPA1112 Übersicht
A GaN power amplifier is a high-electron-mobility transistor (HEMT) based amplifier that leverages the wide bandgap of gallium nitride to achieve high power density, high efficiency, and wide bandwidth. In the hierarchy of RF power amplification, GaN PAs sit above silicon LDMOS and GaAs in terms of power handling and frequency range, making them essential for modern radar, electronic warfare, and broadband communication systems. The ADPA1112 is designed for general-purpose amplification across multiple bands, offering a single solution for systems that need to operate from 1 GHz to 22 GHz.
Key features include a saturated output power of 42 dBm, PAE of 25%, and a power gain of 14 dB. The wide frequency range of 1 GHz to 22 GHz allows it to cover L, S, C, X, Ku, and K bands, reducing the need for multiple narrowband amplifiers. The device is recommended for new designs, indicating active lifecycle status. It operates from a drain supply voltage, with typical quiescent current and thermal performance specified in the datasheet.
Technically, the ADPA1112 uses a GaN-on-SiC process, which provides excellent thermal conductivity and high breakdown voltage, enabling high output power with reliability. The amplifier is internally matched to 50 ohms, simplifying system integration. It requires external bias circuitry and proper thermal management to dissipate heat generated at high output power levels.
Typical applications include radar systems, electronic warfare (EW) jammers, satellite communications (SATCOM), and test and measurement equipment. Its wideband nature makes it ideal for software-defined radio (SDR) transmitters and multi-band communication systems where a single PA can cover multiple frequency bands.
When designing with the ADPA1112, ensure adequate heat sinking and consider the thermal resistance of the package. The device requires a stable drain supply and proper RF decoupling. The input and output are matched to 50 ohms, but external matching may be needed for optimal performance at the band edges.
Drop-in-Alternativen für ADPA1112 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ADPA1122
⚡ Gleiches Gehäuse📋 Referenzalternative (nicht im Katalog)
ADPA1112AEJZ
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TGA2594-SM
⚡ Gleiches Gehäuse ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MAAP-011319
⚡ Gleiches Gehäuse ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
CMPA1D1E025F
⚡ Gleiches Gehäuse ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
ADPA1112 Grenzwerte & elektrische Eigenschaften
| Frequency Range | 1 GHz to 22 GHz |
| Saturated Output Power (POUT) | 42 dBm |
| Power Added Efficiency (PAE) | 25% (typical, 8-16 GHz) |
| Power Gain | 14 dB (typical, 8-16 GHz) |
| Input Power (PIN) | 28.0 dBm |
| Technology | GaN (Gallium Nitride) |
| Gehäuse | 14-LDCC (9.8x8.2 mm) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (per ADI) |
ADPA1112 Pin-Konfiguration
| Pin 1 | RFIN — RF input |
| Pin 2 | VGG1 — Gate bias 1 |
| Pin 3 | VGG2 — Gate bias 2 |
| Pin 4 | VDD — Drain supply |
| Pin 5 | RFOUT — RF output |
| Pin 6 | VDD — Drain supply |
| Pin 7 | VGG2 — Gate bias 2 |
| Pin 8 | VGG1 — Gate bias 1 |
| Pin 9 | RFIN — RF input |
| Pin 10 | GND — Ground |
| Pin 11 | GND — Ground |
| Pin 12 | GND — Ground |
| Pin 13 | GND — Ground |
| Pin 14 | GND — Ground |
Typische Anwendungen
ADPA1112 ist geeignet für 6 Anwendungs: Radar Systems, Electronic Warfare (EW), Satellite Communications (SATCOM), Test and Measurement, 5G and Broadband Communication, Software-Defined Radio (SDR).
Radar Systems
The ADPA1112's wideband coverage from 1 GHz to 22 GHz makes it ideal for multi-band radar transmitters. Its 42 dBm saturated output power provides the necessary drive for long-range detection, while the GaN technology ensures high efficiency and reliability in pulsed operation. The amplifier can be used in both military and civilian radar systems, including weather radar and air traffic control, where frequency agility is required to avoid interference and improve target resolution.
Empfohlen
Electronic Warfare (EW)
In electronic warfare, the ADPA1112 is used in jamming and countermeasure systems that require wideband frequency coverage to disrupt enemy communications and radar. Its 1-22 GHz range allows a single amplifier to cover multiple threat bands, simplifying system design. The high output power of 42 dBm ensures effective jamming, while the 25% PAE helps manage thermal loads in compact EW pods. The amplifier's fast switching capability supports frequency hopping and agile waveforms.
Empfohlen
Satellite Communications (SATCOM)
The ADPA1112 is suitable for SATCOM uplink and downlink amplifiers operating in C, X, Ku, and K bands. Its wideband nature allows a single design to support multiple satellite frequency bands, reducing inventory and development costs. The 42 dBm output power meets the requirements for ground terminals and VSAT systems, while the GaN technology provides the linearity needed for high-order modulation schemes. The amplifier's 50-ohm matched input and output simplify integration with antennas and transceivers.
Empfohlen
Test and Measurement
In test and measurement equipment, the ADPA1112 is used as a broadband driver amplifier for signal generators, spectrum analyzers, and network analyzers. Its 1-22 GHz frequency range covers most RF test requirements, eliminating the need for multiple narrowband amplifiers. The high output power allows testing of high-power devices and systems, while the flat gain response ensures accurate measurements across the band. The amplifier's rugged GaN design withstands mismatched loads and overdrive conditions common in test environments.
Empfohlen
5G and Broadband Communication
The ADPA1112 can be used in 5G base stations and broadband communication systems that require wideband amplification for carrier aggregation and multi-band operation. Its 1-22 GHz range covers sub-6 GHz and mmWave bands, making it a versatile choice for future-proof designs. The 42 dBm output power supports high-capacity links, while the 25% PAE reduces power consumption and cooling requirements. The amplifier's linearity is sufficient for QAM modulation schemes when operated with appropriate back-off.
Empfohlen
Software-Defined Radio (SDR)
The ADPA1112 is ideal for software-defined radio transmitters that need to cover multiple frequency bands with a single hardware platform. Its 1-22 GHz bandwidth allows an SDR to operate from HF to K band, enabling flexible and reconfigurable communication systems. The high output power ensures adequate signal strength for long-range links, while the GaN technology provides the efficiency needed for portable and battery-operated SDRs. The amplifier's wideband performance simplifies the RF front-end design, reducing component count and cost.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ADPA1112 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ADPA1122 | ADPA1112AEJZ | TGA2594-SM |
|---|---|---|---|---|
| Package | 14-LDCC (9.8x8.2) | 14-LDCC (9.8x8.2) | 14-LDCC (9.8x8.2) | 14-LDCC (9.8x8.2) |
| Brand | Analog Devices | Analog Devices | Analog Devices | Qorvo |
| Technology | GaN | GaN | GaN | GaN |
Wichtigste Unterscheidungsmerkmale
- Wideband frequency coverage from 1 to 22 GHz (vs. ADPA1122)
- High output power of 42 dBm (vs. TGA2594-SM)
- GaN technology for high efficiency (vs. MAAP-011319)
Designhinweise
The ADPA1112 dissipates significant heat at 42 dBm output power. Ensure adequate thermal management by using a heatsink or thermal vias under the exposed pad. The LDCC package has a thermal resistance that must be considered; refer to the datasheet for theta_JA and design accordingly to keep junction temperature below the maximum rating.
Use high-frequency PCB materials such as Rogers or PTFE for the RF traces. Keep input and output traces as short as possible and maintain 50-ohm impedance. Place decoupling capacitors close to the bias pins to minimize power supply noise and ensure stable operation.
Do not exceed the maximum drain voltage or input power ratings. Ensure proper bias sequencing: apply gate bias before drain bias to prevent damage. Use a current-limiting power supply during initial testing to avoid overcurrent conditions.
Compliance-Informationen
RoHS compliance is indicated by ADI's product page. Other compliance details are not specified in the provided data.
