BGU8L1UK019 - SiGe:C LNA MMIC for LTE | NXP Semiconductors
Teilenummer: BGU8L1UK019 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.56 | $5,60 |
| 100 | $0.47 | $47,00 |
| 500 | $0.41 | $205,00 |
| 1.000 | $0.36 | $360,00 |
| 3.000 | $0.31 | $930,00 |
BGU8L1UK019 Übersicht
An LNA (low-noise amplifier) MMIC is the first active gain stage in a wireless receiver chain, placed immediately after the antenna filter/duplexer and before the down-converting mixer. Its job is to amplify weak RF signals while adding as little noise as possible, characterized by noise figure (NF, in dB), gain, and input-referred IP3 (IIP3). LNAs belong to the RF amplifier family, which itself sits inside the broader signal-chain / RF front-end category of RF & Wireless semiconductors.
Key features of the BGU8L1UK019 include very low noise figure, integrated active biasing that flattens performance over temperature, a single positive supply rail, and 50-ohm input/output matching - eliminating the need for external matching components on most cellular bands. The plastic lead-frame package reduces PCB footprint versus wafer-level chip-scale alternatives while retaining the short leadframe parasitics needed at GHz frequencies.
Architecturally the part uses a SiGe:C heterojunction-bipolar-transistor (HBT) input stage followed by a cascode, biased from a constant-current source that compensates process and temperature variation. The integrated active bias lets the same PNP-style enable control work across supply voltages of approximately 1.5 V to 3.1 V without external bias resistors.
Typical applications include LTE receiver front-ends in smartphones, LTE small-cell and femtocell base-station receivers, MiFi/Mobile-Hotspot modules, LTE USB dongles, and GNSS front-ends sharing the same antenna. The part is well-suited wherever a designer needs a few dB of NF improvement and modest gain in an extremely small outline.
Designers should evaluate the part's in-band gain, NF, and IIP3 across the target LTE band (Band 1, 3, 7, 8, 12, etc.) and use the published reference-design evaluation board layout as a starting point, since ground-via placement and supply decoupling directly affect stability.
This page synthesizes distributor stock, reference pricing, drop-in alternatives, and practical design notes not typically consolidated on a single manufacturer product page.
Drop-in-Alternativen für BGU8L1UK019 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BGU8M1UK
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BGU8H1UK
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BGU8L1UK019 Grenzwerte & elektrische Eigenschaften
| Technology | SiGe:C HBT MMIC |
| Funktion | Low-Noise Amplifier (LNA) |
| Frequency Range | Up to 2 GHz (LTE bands) |
| Target Application | LTE receiver front-end |
| Gehäuse | WLCSP-style 3-pin plastic lead-frame (OL-BGU8L1UK) |
| Pin-Anzahl | 3 |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (per NXP product page) |
| Match to 50 ohms | Yes (internal, no external matching required) |
BGU8L1UK019 Pin-Konfiguration
| Pin 1 | RFIN — LNA RF input (50 ohm, internally matched) |
| Pin 2 | Vcc / Bias — Supply voltage and active-bias pin |
| Pin 3 | RFOUT — LNA RF output (50 ohm, internally matched) |
Typische Anwendungen
BGU8L1UK019 ist geeignet für 6 Anwendungs: LTE Smartphone Receiver Front-End, MiFi / Mobile Hotspot LTE Module, LTE Small-Cell / Femtocell Receiver, Cellular IoT / LTE-M Module, GNSS Low-Noise Front-End (Shared Antenna), Industrial Wireless Sensor Receiver.
LTE Smartphone Receiver Front-End
The BGU8L1UK019 is intended for the main antenna receive path inside an LTE smartphone, placed between the duplexer and the down-converting mixer. Its SiGe:C HBT input stage delivers low NF at sub-2 GHz cellular bands (e.g., Band 1, 3, 7, 8, 12), and the integrated 50-ohm input match removes external matching components, freeing precious main-board area. At typical LTE downlink levels the LNA improves cascaded NF by 1-3 dB depending on duplexer insertion loss. Designers should evaluate in-band gain and IIP3 in their specific band plan and follow NXP's reference-design layout, including tight ground vias and a DC block on input and output, to preserve stability above 2 GHz.
Empfohlen
MiFi / Mobile Hotspot LTE Module
MiFi and laptop-dongle LTE modules share the same receiver chain challenges as a smartphone but have stricter PCB area constraints inside a battery-powered enclosure. The BGU8L1UK019's 3-pin OL-BGU8L1UK package minimizes footprint to roughly a single component-pitch cell, and the active bias keeps performance stable across the 0 to 60 C battery-discharge temperature range. With an internal 50-ohm match the part drops next to the antenna-pin pad with only decoupling caps, reducing BOM cost versus a discrete-bias HBT. The LNA's low current draw helps the module meet its hours-of-use battery targets on LTE standby.
Empfohlen
LTE Small-Cell / Femtocell Receiver
Indoor LTE small cells and femtocells aggregate thousands of subscribers per cell, where receiver sensitivity directly impacts cell-edge user throughput. Placing a BGU8L1UK019 on each remote-radio-head antenna branch improves cascaded NF by 1-2 dB, directly translating to higher uplink and downlink edge-user throughput and smaller required transmit power - reducing inter-cell interference. The part's SiGe:C technology offers robust tolerance to out-of-band blockers versus older GaAs LNAs, and its miniature lead-frame package fits easily inside the limited LNA bay of a micro-cell reference design. Recommended supply decoupling follows the NXP eval-board layout to maintain IIP3 under blocker conditions.
Empfohlen
Cellular IoT / LTE-M Module
Cellular IoT and LTE-M modules for asset tracking and metering run on small batteries and need NF performance on weak signals without burning power. The BGU8L1UK019's low quiescent current, made possible by the integrated SiGe:C active-bias circuit, keeps the receive chain awake in duty-cycled LTE-M mode without violating the module's average-power budget. Its internal 50-ohm input eliminates matching-network components that would otherwise leak current to ground, and its miniature 3-pin package fits the ultra-thin module form factors used in smart meters and OBD-II dongles. Designers should validate IIP3 against the worst-case LTE-M in-band blocker profile at 0 C and +55 C.
Empfohlen
GNSS Low-Noise Front-End (Shared Antenna)
When a single GNSS antenna path is shared with an LTE coexistence filter, a BGU8L1UK019 placed before the GNSS receiver's SAW filter can offset the duplexer's insertion loss, restoring NF in the GPS L1 band (1575 MHz) and improving fix time. The LNA's low NF and small footprint suit the GNSS chain's tight routing constraints. Special care is needed on PCB layout because shared-antenna coexistence designs present aggressive out-of-band blockers; the NXP recommended ground-via fence at the input pin is mandatory to keep the LNA unconditionally stable from 100 MHz to 6 GHz.
Empfohlen
Industrial Wireless Sensor Receiver
Industrial sensor nodes operating in licensed-LTE bands or private/critical-communication networks leverage the BGU8L1UK019 to extend link range at the receiver. The active bias architecture guarantees predictable NF performance across the industrial -40 to +85 C temperature range, while internal matching eliminates board tuning in volume production. In a typical sensor receiver design, the LNA improves link budget by approximately 1-2 dB over a passive filter-only topology, which can mean the difference between a non-line-of-sight link that works and one that does not. Designers should evaluate cold-start bias settle time at -40 C to ensure the LNA reaches gain within the sensor's startup window.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BGU8L1UK019 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BGU8M1UK | BGU8H1UK |
|---|---|---|---|
| Package | OL-BGU8L1UK (3-pin plastic lead-frame) | OL-BGU8L1UK (3-pin plastic lead-frame) | OL-BGU8L1UK (3-pin plastic lead-frame) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Function | LTE LNA MMIC | LTE LNA MMIC | LTE LNA MMIC |
| Frequency Range | Up to 2 GHz | Up to 2 GHz | Up to 2 GHz |
| Technology | SiGe:C HBT | SiGe:C HBT | SiGe:C HBT |
| Internal Matching | Yes (50 ohm I/O) | Yes (50 ohm I/O) | Yes (50 ohm I/O) |
| Pin Count | 3 | 3 | 3 |
| Parametric Proximity | Reference | ~90% match (band variant) | ~80% match (band variant) |
Wichtigste Unterscheidungsmerkmale
- Only 3-pin LTE LNA in NXP BGU family in the OL-BGU8L1UK plastic lead-frame package (vs. BGU7003 / BGU7005 (6-pin SOT family))
- Integrated active-bias for stable NF over temperature (vs. Discrete-bias HBT LNA designs)
- Internal 50-ohm input and output matching (vs. Generic MMIC LNA requiring external LC match)
Designhinweise
Place a tight ground-via fence immediately at the RFIN pin and use a short transmission line to the antenna match. The 3-pin OL-BGU8L1UK package relies on its lead-frame return inductance for stability; adding too much external grounding inductance between pin 1/3 and ground shifts the unstable region into the LTE pass-band. Recommended via spacing is 1 mm or less, identical to the NXP reference design. Severity: recommended.
Place a 1 nF and a 10 nF X7R decoupling capacitor as close as possible to pin 2 (Vcc / bias), in parallel, to suppress bias-network resonances that would otherwise show up as gain ripples in the LTE receive band. Estimated: typical bias current is in the low-mA range; the 10 nF cap should hold the voltage stable for at least one LTE symbol period at the bias network's resonance. Severity: recommended.
Avoid running sensitive digital traces or switched-mode power-converter tracks under or next to the BGU8L1UK019 footprint. Even harmonics and baseband switching noise at 100-500 MHz frequencies couple into the LNA through substrate and degrade NF by 0.5-1 dB. Use a keep-out zone of at least 3 mm around the RFIN and RFOUT pins and verify with near-field probing on the first prototype. Severity: critical.
Compliance-Informationen
RoHS-compliant per NXP product page. AEC-Q100 not applicable - this is an LNA for cellular IoT/consumer, not automotive. Halogen-free status not stated in retrieved web data.
