CY14V104LA-BA25XI - 4Mbit nvSRAM 25ns FBGA-48 | Infineon
Teilenummer: CY14V104LA-BA25XI ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.01 | $1,01 |
| 10 | $0.95 | $9,50 |
| 100 | $0.87 | $87,00 |
| 500 | $0.79 | $395,00 |
| 1.000 | $0.72 | $720,00 |
CY14V104LA-BA25XI Übersicht
An nvSRAM is a memory IC that combines the fast, unlimited read/write endurance of a standard static RAM with a non-volatile element in each memory cell. In the broader memory hierarchy, nvSRAM sits between volatile SRAM and EEPROM/Flash: it behaves like a parallel SRAM during normal operation but automatically stores the SRAM contents to non-volatile cells on power loss, eliminating the need for external batteries.
Key features include the 25 ns access time for zero-wait-state parallel bus designs, automatic STORE on power-down triggered by the hardware STORE (HSB) pin, a minimum 1 million STORE cycle endurance, and 20-year data retention at 85C. The dual organization (byte-wide via x8 mode and word-wide via x16 with byte enables BHE/BLE) lets one design cover both 8-bit and 16-bit buses.
Technically, the CY14V104LA performs SRAM reads when CE and OE are LOW and WE and HSB are HIGH; addresses A0-A18 (x8) or A0-A17 (x16) select among 524,288 bytes or 262,144 words. The RECALL function restores non-volatile data to SRAM at power-up, and software-triggered STORE/RECALL sequences are supported via address sequences per the Infineon/Cypress datasheet.
Typical applications include industrial PLCs and data loggers, networking equipment configuration storage, medical instrumentation, and automotive/avionics black-box buffers where a sudden power loss must not corrupt data.
Design consideration: reserve a small capacitor energy margin on the 3.3V rail so the device can complete a hardware STORE event during brownout; the HSB pin should be monitored or driven by supervisory logic to guarantee the STORE window.
This page synthesizes verified distributor pricing, drop-in family alternatives, and practical design guidance not found in the standard datasheet extract, with all data marked with its last-verified date for freshness.
Drop-in-Alternativen für CY14V104LA-BA25XI – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit CY14V104LA-BA25XI (gleiche Bauform und Footprint) – abweichend in Package, Access Time, Interface, Memory Type, Operating Temperature.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
CY14V104LA-BA45XI
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CY14V104NA-BA25XI
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CY14B104LA-BA25XI
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CY14V104LA-BA25XI Grenzwerte & elektrische Eigenschaften
| Speichertyp | nvSRAM (Non-Volatile SRAM) |
| Speichergröße | 4 Mbit |
| Speicherorganisation | 512K x 8 / 256K x 16 |
| Schnittstelle | Parallel |
| Access Time | 25 ns |
| Versorgungsspannung | 3 V (typical 3.3 V) |
| Betriebstemperatur | -40C to +85C |
| STORE Cycle Endurance | 1,000,000 cycles minimum |
| Data Retention | 20 years |
| SRAM Read/Write Endurance | Unlimited (infinite SRAM cycles) |
| Address Bus (x8 mode) | A0 to A18 |
| Address Bus (x16 mode) | A0 to A17 with BHE/BLE byte enables |
| Non-Volatile Functions | Automatic STORE on power-down, RECALL on power-up, software STORE/RECALL, HSB pin |
| Gehäuse | 48-FBGA (6 x 10 mm, 1.20 mm height) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Grade | Industrial |
CY14V104LA-BA25XI 48-fbga (6 x 10 mm, 1.20 mm height) Pinbelegungsleitfaden
Pinbelegung für CY14V104LA-BA25XI (48-fbga (6 x 10 mm, 1.20 mm height)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für CY14V104LA-BA25XI.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
CY14V104LA-BA25XI ist geeignet für 6 Anwendungs: Industrial PLC and Data Logging, Networking Equipment Configuration Storage, Medical Instrumentation, Automotive and Avionics Event Recorders, POS Terminals and Payment Devices, Test and Measurement Instruments.
Industrial PLC and Data Logging
The CY14V104LA-BA25XI fits industrial programmable logic controllers and event data loggers because its 25 ns parallel access keeps up with fast MCU external buses, while the automatic STORE on power-down guarantees that counters, setpoints, and fault logs survive an unexpected power cut. In a typical PLC module the nvSRAM sits on the processor's memory-mapped bus (512K x 8 mode, addresses A0-A18) holding calibration tables and run-time state. Unlike battery-backed SRAM, there is no lithium cell to replace or monitor, reducing maintenance cost; unlike EEPROM/Flash, writes during logging are unlimited SRAM operations, so the 1M STORE cycle limit only applies to non-volatile commits. Bulk capacitance on the 3.3V rail must cover the STORE interval during brownout.
Empfohlen
Networking Equipment Configuration Storage
Routers, switches, and telecom line cards use the CY14V104LA-BA25XI to hold boot configuration, MAC address tables, and license data. The 25 ns access time allows zero-wait-state reads during early boot before slower Flash is initialized, cutting startup latency, while 20-year retention ensures the configuration is intact across the product's service life. The dual x8/x16 organization lets one 48-FBGA footprint serve both 8-bit management buses and 16-bit datapath designs. Because network equipment sees frequent write activity (counters, statistics), the unlimited SRAM write endurance is a decisive advantage over Flash, whose erase cycles would wear out in months. Software STORE/RECALL commands let the host commit configuration changes only when needed.
Empfohlen
Medical Instrumentation
Patient monitors, infusion pumps, and diagnostic instruments require that calibration constants and therapy histories never be lost, even during battery swap or an emergency power removal. The CY14V104LA-BA25XI addresses this with automatic non-volatile STORE triggered by the HSB supervisor circuit, delivering 20-year retention and 1 million STORE cycles. Its parallel 25 ns interface suits the fast DSPs and MCUs used in signal acquisition chains, where wait states on memory reads would reduce sample throughput. The RoHS-compliant FBGA-48 package (6 x 10 mm) keeps board area small in handheld devices. Designers should add a supervisor (reset IC) wired to HSB so the host pauses bus access during any in-progress STORE event.
Empfohlen
Automotive and Avionics Event Recorders
Black-box style event recorders capture fault codes, GPS positions, and crash telemetry that must persist through sudden power loss. The CY14V104LA-BA25XI records at SRAM speed (unlimited writes at 25 ns access), so high-rate sampling is not throttled by erase/program delays, and the automatic power-down STORE commits everything non-volatile within one cycle. The 20-year retention covers the service life of the vehicle or aircraft section, and the -40C to +85C industrial range suits harsh under-dash and unpressurized environments. The 1M STORE endurance budget is sufficient because commits happen at key-off or power-fail, not per sample. Bulk capacitance sizing must be verified against the datasheet STORE current during brownout.
Empfohlen
POS Terminals and Payment Devices
Point-of-sale terminals store transaction journals, fiscal counters, and encryption keys in memory that cannot lose state when the terminal is unplugged mid-transaction. The CY14V104LA-BA25XI provides 512K x 8 of non-volatile-backed storage with unlimited SRAM journal writes and a power-fail automatic STORE, satisfying audit requirements without a battery-backed RTC module. The 25 ns parallel bus keeps transaction processing snappy, and the 6 x 10 mm FBGA-48 footprint fits compact handheld payment terminals. The 20-year retention and 1M STORE cycles comfortably exceed a terminal's fiscal lifetime. Designers should sequence the HSB pin with the terminal's power-good signal so the final journal entry is always committed before rail collapse.
Empfohlen
Test and Measurement Instruments
Bench instruments such as oscilloscopes, data analyzers, and signal generators use nvSRAM for instrument state, last-used settings, and fast-access lookup tables. The CY14V104LA-BA25XI's 25 ns access allows the instrument MCU to restore full panel state at power-up with zero wait states, improving perceived boot speed versus Flash-based restore paths. Unlimited SRAM endurance supports frequent setting changes during bench use, while the automatic STORE guarantees recall of the previous session even after an accidental power cut. The 256K x 16 organization with BHE/BLE byte enables suits 16-bit DSP front ends in acquisition hardware. The 48-FBGA package's 1.20 mm height fits within standard instrument module envelopes.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für CY14V104LA-BA25XI – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | CY14V104LA-BA45XI | CY14V104NA-BA25XI | CY14B104LA-BA25XI |
|---|---|---|---|---|
| Package | 48-FBGA (6 x 10 mm) | 48-FBGA (6 x 10 mm) - same | 48-FBGA (6 x 10 mm) - same | 48-FBGA (6 x 10 mm) - same |
| Brand | Infineon Technologies (Cypress) | Infineon Technologies (Cypress) | Infineon Technologies (Cypress) | Infineon Technologies (Cypress) |
| Density / Organization | 4 Mbit, 512K x 8 / 256K x 16 | 4 Mbit, 512K x 8 / 256K x 16 | 4 Mbit, 256K x 16 only | 4 Mbit, 512K x 8 / 256K x 16 |
Wichtigste Unterscheidungsmerkmale
- Fastest family speed grade (vs. CY14V104LA-BA45XI)
- Dual x8/x16 organization (vs. CY14V104NA-BA25XI)
- Battery-free non-volatility (vs. Battery-backed SRAM modules)
Designhinweise
The automatic STORE on power-down requires enough residual rail energy to complete the non-volatile commit. Size the 3.3V bulk capacitor (typically tens of uF plus local 0.1 uF ceramics) using the STORE current and duration from the manufacturer datasheet for your worst-case brownout slope. Estimated: start from the datasheet STORE current and the capacitor discharge from 3.3 V down to the device's minimum operating voltage to confirm the STORE completes before the rail collapses.
Monitor the HSB (Hardware STORE Busy) pin. It drives LOW during any hardware STORE and software-initiated STORE, and the host must not issue read or write cycles while it is asserted. Wiring HSB to a CPU interrupt or FPGA input and gating chip-select with it prevents corrupt bus cycles. Do not leave HSB floating; follow the datasheet's recommended pull-up and any required HSB-store enable wiring for your supply supervisory scheme.
For the 48-ball FBGA (6 x 10 mm), fan out address and data buses with short, matched traces; at 25 ns access times the setup windows are generous, but keep CE/OE/WE strobes free of long stubs to avoid reflections on 16-bit configurations using BHE/BLE. Place the 0.1 uF decoupling capacitor directly under the BGA center, and provide the standard via-in-pad or dog-bone escape pattern. Reflow profile must follow the MSL rating printed on the product label.
Compliance-Informationen
DigChip specification record lists the FBGA-48 package as ROHS COMPLIANT. XI suffix denotes lead-free packaging. REACH and conflict minerals status not stated in provided data.
