HMC311SC70ETR - DC-8GHz GaAs HBT Gain Block MMIC Amplifier | ADI
Teilenummer: HMC311SC70ETR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.4 | $8,40 |
| 10 | $7.56 | $75,60 |
| 100 | $6.72 | $672,00 |
| 500 | $5.95 | $2.975,00 |
| 1.000 | $5.32 | $5.320,00 |
HMC311SC70ETR Übersicht
An RF gain block is a wideband, unconditionally-stable amplifier IC used to provide a fixed amount of gain across a broad frequency range. In the RF/microwave signal chain hierarchy, a gain block sits between the LNA/mixer and the next stage (PA, ADC driver, or LO chain), and is implemented as a monolithic microwave integrated circuit (MMIC) on GaAs, SiGe, or GaN. The HMC311SC70 (E) is the industry's classic general-purpose cascadable 50-ohm gain stage for sub-8 GHz IF and LO buffering.
Key features include 15 dB gain, 5 dB noise figure, +11 dBm P1dB output power, and a +30 dBm output IP3 at 1 GHz. The HBT process is biased directly from a single 5 V rail with no external bias network required, and the device internally matches to 50 ohms at input and output, eliminating the need for off-chip matching components. The SC-70 (SOT-363) footprint makes it one of the smallest wideband gain blocks available.
The architecture is a single-stage Darlington HBT with on-chip bias regulation. The InGaP/GaAs HBT process gives the part excellent thermal stability and ruggedness - it tolerates 50-ohm load VSWRs without damage - while the active-bias circuit holds quiescent current nearly constant over temperature. The result is a drop-in amplifier that performs identically across multiple cascaded stages and over industrial temperature ranges.
Typical applications include driving the LO port of HMC-series mixers up to +15 dBm, IF buffering in microwave radios, cellular BTS transceiver gain stages, broadband test equipment, and military EW/surveillance front-ends. The wide DC-8 GHz bandwidth also makes it a useful general-purpose gain block in lab setups and instrumentation.
When designing with this device, AC-couple both input and output ports to protect the DC bias point and to avoid disturbing the on-chip match. Keep input power below the P1dB for linear operation, and note that the part is not internally reverse-isolation-protected - always add a DC-blocking cap and, if upstream devices have DC on their outputs, a bias tee or series DC-block.
This page synthesizes DigiKey/Mouser pricing, ADI datasheet specs, drop-in alternatives in the SC-70 footprint, and PCB-level design notes not collected on any single distributor page.
Drop-in-Alternativen für HMC311SC70ETR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
HMC311SC70E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC311SC70
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC311SC70ETR
✅ Drop-In✓ Auf Lager
$5.32 / Stück
Datenblatt ansehen →GALI-6+
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TQP3M9008
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC311SC70ETR Grenzwerte & elektrische Eigenschaften
| Funktion | RF Amplifier / Gain Block |
| Technology | GaAs InGaP HBT MMIC |
| Frequency Range | DC to 8 GHz |
| Gain (typ.) | 15 dB |
| Noise Figure (typ.) | 5 dB |
| Output IP3 (typ.) | +30 dBm |
| P1dB Output Power (typ.) | +11 dBm to +15 dBm |
| Supply Voltage (Vdd) | 5 V (typ.) |
| Versorgungsstrom | 54 mA (typ.) |
| Input/Output Impedance | 50 Ohm (internally matched) |
| Gehäuse | SC-70-6 (SOT-363, 6-pin) |
| Montageart | Surface Mount |
| Betriebstemperatur | -40 C to +85 C |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
HMC311SC70ETR Pin-Konfiguration
| Pin 1 | RFIN — RF input (internally matched to 50 ohm, DC blocked externally) |
| Pin 2 | GND — Ground (low-inductance return) |
| Pin 3 | GND — Ground (low-inductance return) |
| Pin 4 | RFOUT — RF output (internally matched to 50 ohm, DC blocked externally) |
| Pin 5 | GND — Ground (low-inductance return) |
| Pin 6 | VDD — +5 V supply (54 mA typical, decouple with 1 nF + 10 uF) |
Typische Anwendungen
HMC311SC70ETR ist geeignet für 6 Anwendungs: LO Driver for HMC-Series Mixers, IF Buffering in Microwave Radios, Cellular BTS Transceiver Gain Stage, Broadband Test & Measurement Instrumentation, Military EW / Surveillance Front-Ends, General-Purpose Cascadable 50 Ohm Gain Stage.
LO Driver for HMC-Series Mixers
The HMC311SC70ETR's +15 dBm output power and +30 dBm OIP3 make it the canonical LO driver for HMC-series passive double-balanced mixers (e.g., HMC213A, HMC218B, HMC520). Place the HMC311 between the LO synthesizer and the mixer LO port with 100 pF DC blocks on each side; one stage delivers sufficient LO drive for most HMC mixers, while cascading two HMC311s yields +20 dBm for higher-linearity mixer families. The 5 dB NF is irrelevant in this position because the LO path does not carry modulated signal information; what matters is the high OIP3, which keeps LO leakage and spurious products low.
Empfohlen
IF Buffering in Microwave Radios
In microwave backhaul and point-to-point radio IF chains, the HMC311SC70ETR sits between the down-converting mixer and the IF filter/ADC driver to make up for filter insertion loss and provide a flat 15 dB gain block from DC to 8 GHz. The 50 ohm input/output match means it can be cascaded directly between filter sections without matching networks. With 5 dB NF it is best placed after the front-end LNA and mixer, where the system NF has already been set; in this position the HMC311's role is gain, not noise, and its DC-8 GHz bandwidth covers all common IF frequencies from 70 MHz to 6 GHz.
Empfohlen
Cellular BTS Transceiver Gain Stage
The HMC311SC70ETR is widely deployed in cellular base-station transceiver signal chains as a general-purpose gain block in the Tx IF and Rx IF paths. Its DC-8 GHz bandwidth covers all standard cellular IF frequencies (140 MHz, 190 MHz, 380 MHz, 450 MHz), and the 50 ohm cascadable design lets it be dropped anywhere a flat 15 dB of gain is needed. The high OIP3 (+30 dBm) keeps intermodulation products under control when the stage is placed ahead of or between mixers, while the small SC-70-6 footprint allows high-density PCB layouts behind the radio front panel.
Empfohlen
Broadband Test & Measurement Instrumentation
In laboratory test equipment such as spectrum-analyzer front-end IF stages, signal-generator output buffers, and wideband bench amplifiers, the HMC311SC70ETR provides a flat 15 dB gain from DC to 8 GHz with a 50 ohm match that interfaces directly to standard test-port connectors. The cascadable design lets designers stack two or three units for 30-45 dB total gain when bench amplifiers are required. The +30 dBm OIP3 keeps the intermodulation floor low for sensitive measurements, and the SC-70-6 footprint allows the buffer to be placed close to the test connector to minimize trace losses and resonances.
Empfohlen
Military EW / Surveillance Front-Ends
The HMC311SC70ETR's GaAs InGaP HBT construction, -40 C to +85 C operating range, and unconditional stability across DC-8 GHz make it a reliable choice for military electronic-warfare and surveillance receiver IF chains. It provides IF gain in a compact SC-70-6 footprint suitable for high-density EW receiver cards, and its high OIP3 helps the receiver handle simultaneous signals without generating spurious responses. The part's wideband nature makes it useful as a single gain stage covering multiple radar-band IF frequencies.
Empfohlen
General-Purpose Cascadable 50 Ohm Gain Stage
The HMC311SC70ETR is the textbook 'cascadable 50 ohm gain stage' for any application that needs a flat 15 dB of wideband gain with a minimum of external parts. Engineers use it as a generic building block to make up gain between filter sections, isolate stages, or boost signal levels into and out of mixers - and they cascade two or three of them in series when 30-45 dB total gain is required. The 5 V single-supply operation and SC-70-6 footprint make it a particularly attractive building block for breadboard and prototype RF designs where simplicity matters more than absolute lowest noise.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für HMC311SC70ETR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | HMC311SC70E | HMC311SC70 | GALI-6+ | TQP3M9008 |
|---|---|---|---|---|---|
| Brand | Analog Devices | Analog Devices | Analog Devices (legacy, non-RoHS) | Mini-Circuits | Qorvo |
| Package | SC-70-6 (SOT-363) | SC-70-6 (SOT-363) - same | SC-70-6 (SOT-363) - same | SC-70-6 / SOT-363 - same | SOT-363 (SC-70-6 equiv.) - same |
| Frequency Range | DC to 8 GHz | DC to 8 GHz - same | DC to 8 GHz - same | DC to 4 GHz | 50 MHz to 1.5 GHz |
| Gain (typ. @1 GHz) | 15 dB | 15 dB | 15 dB | 11.5 dB | 14 dB |
| Noise Figure | 5 dB | 5 dB | 5 dB | 4.5 dB | 0.9 dB |
| P1dB Output Power | +11 to +15 dBm | +11 to +15 dBm | +11 to +15 dBm | +12 dBm | +17 dBm |
| Output IP3 | +30 dBm | +30 dBm | +30 dBm | +30 dBm | +35 dBm |
| Supply Voltage / Current | 5 V / 54 mA | 5 V / 54 mA | 5 V / 54 mA | 4.0-5.5 V / 50 mA | 5 V / 75 mA |
Wichtigste Unterscheidungsmerkmale
- Wider bandwidth than Mini-Circuits GALI-6+ in the same footprint (vs. GALI-6+)
- Higher OIP3 and wider bandwidth than Qorvo TQP3M9008 (vs. TQP3M9008)
- Same die as the legacy HMC311SC70 (legacy tin-lead vs RoHS E variant) (vs. HMC311SC70 (legacy))
Designhinweise
Use a continuous ground plane on the layer immediately beneath the SC-70-6 footprint and stitch the three ground pins to it with multiple low-inductance vias placed as close to each pin as possible. Place the input and output microstrip traces on the top layer with 50 ohm characteristic impedance (approx. 0.6 mm wide on FR-4 with er=4.3 and 0.2 mm dielectric) and keep them short - the part's 8 GHz bandwidth means trace length must stay below approximately lambda/16 at 8 GHz (around 2 mm) to avoid resonances and gain ripple.
Decouple the Vdd pin (pin 6) with a 1 nF ceramic capacitor placed within 1 mm of the pin for high-frequency decoupling, plus a 10 uF tantalum or ceramic bypass cap on the supply trace nearby. The HMC311SC70ETR draws 54 mA from 5 V; if the supply comes from a switching regulator, ensure the regulator's switching noise is filtered below the part's noise contribution - otherwise the linearity advantage of the +30 dBm OIP3 will be compromised by supply-borne spurs.
Always AC-couple the RF input and output with 100 pF to 1 nF DC-blocking capacitors - the HMC311 has internal DC bias on its RF pins, and driving DC into them will disturb the on-chip match and may damage the part. Do not cascade more than three HMC311 stages without inter-stage attenuators; cumulative gain of 45 dB in a small footprint can cause parasitic feedback and oscillation. The part is unconditionally stable into 50 ohms but can become conditionally stable with reflective loads above 7 GHz - check stability with the S-parameter file before using in extreme VSWR environments.
Compliance-Informationen
RoHS-compliant per ADI product page (E suffix denotes lead-free). The non-E HMC311SC70 is the legacy tin-lead version. MSL rating and halogen-free status not stated in the verified web data; MSL is recorded as [DATA_NEEDED] in the specs array.
